Abbildungen dienen nur als Referenz
IPD25N06S4L-30
+StücklisteMOSFETs N-Ch 60V 25A DPAK-2 OptiMOS-T2
-
HerstellerInfineon-Technologien
-
Herstellerteil #IPD25N06S4L-30
-
Datenblatt IPD25N06S4L-30 DataSheet
-
Auf Lager7832
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | MouseReel |
| StandardPackQty | 2500 |
Übersicht
Description
The IPD25N06S4L-30 is a type of N-channel power MOSFET, commonly used in electronic circuits for switching and amplification purposes. It belongs to the family of MOSFETs which are known for their efficiency in handling high power with minimal losses. The device is optimized for reduced on-state resistance and improved switching performance, making it suitable for applications in power management, DC-DC converters, and automotive systems.
Key features of the IPD25N06S4L-30 include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) capability of up to 25A. The MOSFET is designed to operate at a low gate threshold voltage, which allows it to be easily driven by low-voltage digital circuits. The package type is typically a TO-252, which provides a good balance between thermal performance and ease of use in PCB mounting.
Overall, the IPD25N06S4L-30 is valued for its reliable performance in high-speed and high-efficiency applications, offering a robust solution for various power switching needs.
Key features of the IPD25N06S4L-30 include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) capability of up to 25A. The MOSFET is designed to operate at a low gate threshold voltage, which allows it to be easily driven by low-voltage digital circuits. The package type is typically a TO-252, which provides a good balance between thermal performance and ease of use in PCB mounting.
Overall, the IPD25N06S4L-30 is valued for its reliable performance in high-speed and high-efficiency applications, offering a robust solution for various power switching needs.
Equivalent
The IPD25N06S4L-30 is a N-channel MOSFET. Equivalent products include:
1. IRFZ44N by International Rectifier
2. FQP30N06L by Fairchild Semiconductor (now ON Semiconductor)
3. STP55NF06 by STMicroelectronics
These alternatives have similar voltage and current ratings, though variations in specifications like Rds(on) and gate charge may exist, which should be checked for compatibility with your application.
1. IRFZ44N by International Rectifier
2. FQP30N06L by Fairchild Semiconductor (now ON Semiconductor)
3. STP55NF06 by STMicroelectronics
These alternatives have similar voltage and current ratings, though variations in specifications like Rds(on) and gate charge may exist, which should be checked for compatibility with your application.
Features
The IPD25N06S4L-30 is a power MOSFET known for its efficiency and reliability in various applications. Here are its key features:
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 25A, making it suitable for medium to high-power applications.
2. Low On-State Resistance: The device offers a low R_DS(on), typically around 30 mΩ, which helps reduce conduction losses and improve efficiency.
3. Enhanced Switching Performance: The MOSFET is designed for fast switching times, which aids in minimizing energy loss during the transition between on and off states.
4. Thermal Performance: It features good thermal performance, with a package that supports efficient heat dissipation, ensuring reliability under high power conditions.
5. Logic Level Gate Drive: The device can be driven by logic level signals, making it compatible with microcontrollers and other digital circuits.
6. RoHS Compliant: It adheres to environmental standards, being free from lead and other hazardous substances.
These features make the IPD25N06S4L-30 suitable for applications like motor control, power supplies, and DC-DC converters.
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 25A, making it suitable for medium to high-power applications.
2. Low On-State Resistance: The device offers a low R_DS(on), typically around 30 mΩ, which helps reduce conduction losses and improve efficiency.
3. Enhanced Switching Performance: The MOSFET is designed for fast switching times, which aids in minimizing energy loss during the transition between on and off states.
4. Thermal Performance: It features good thermal performance, with a package that supports efficient heat dissipation, ensuring reliability under high power conditions.
5. Logic Level Gate Drive: The device can be driven by logic level signals, making it compatible with microcontrollers and other digital circuits.
6. RoHS Compliant: It adheres to environmental standards, being free from lead and other hazardous substances.
These features make the IPD25N06S4L-30 suitable for applications like motor control, power supplies, and DC-DC converters.
Pinout
The IPD25N06S4L-30 is a power MOSFET produced by Infineon Technologies. It comes in a TO-252 package, also known as a DPAK. This component typically has three pins:
1. Gate (G): Used to control the MOSFET's operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The terminal where the current enters the MOSFET when it is turned on.
3. Source (S): The terminal where the current exits the MOSFET.
The specific function of the IPD25N06S4L-30 is to act as a switch or amplifier in electronic circuits, particularly for applications requiring efficient power management. It has a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 25A. The component is designed for low on-state resistance and fast switching, making it suitable for high-efficiency power applications.
1. Gate (G): Used to control the MOSFET's operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The terminal where the current enters the MOSFET when it is turned on.
3. Source (S): The terminal where the current exits the MOSFET.
The specific function of the IPD25N06S4L-30 is to act as a switch or amplifier in electronic circuits, particularly for applications requiring efficient power management. It has a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 25A. The component is designed for low on-state resistance and fast switching, making it suitable for high-efficiency power applications.
Manufacturer
The IPD25N06S4L-30 is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that is recognized as one of the leading companies in the global semiconductor industry. They specialize in the design, development, production, and marketing of a wide range of semiconductor and system solutions. Their products are used in a variety of applications, including automotive, industrial power control, power management, digital security solutions, and more. Infineon's focus is on providing innovative solutions that contribute to efficiency and sustainability, particularly in areas such as energy efficiency, mobility, and security.
Application
The IPD25N06S4L-30 is a MOSFET transistor commonly used in various electronic applications. Its primary application areas include:
1. Power Management: Utilized in power supply circuits for efficient voltage regulation and conversion.
2. Motor Control: Employed in controlling DC motors and actuators due to its ability to handle high currents.
3. Switching Applications: Used in high-speed switching for inverters and converters.
4. Automotive Electronics: Suitable for use in automotive control systems and modules.
5. Consumer Electronics: Found in devices like TVs and audio equipment for power control.
6. Industrial Automation: Applied in controlling industrial machinery and processes.
These applications leverage the MOSFET's ability to handle significant power levels efficiently.
1. Power Management: Utilized in power supply circuits for efficient voltage regulation and conversion.
2. Motor Control: Employed in controlling DC motors and actuators due to its ability to handle high currents.
3. Switching Applications: Used in high-speed switching for inverters and converters.
4. Automotive Electronics: Suitable for use in automotive control systems and modules.
5. Consumer Electronics: Found in devices like TVs and audio equipment for power control.
6. Industrial Automation: Applied in controlling industrial machinery and processes.
These applications leverage the MOSFET's ability to handle significant power levels efficiently.
Package
The IPD25N06S4L-30 is typically packaged in a TO-252 (DPAK) package. This is a surface-mount package used for power semiconductors, offering good thermal performance and compact size, making it suitable for various electronic applications.
