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IPD50N06S4L-08
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HerstellerInfineon-Technologien
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Herstellerteil #IPD50N06S4L-08
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Spezifikationen
| Attribut | Wert |
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | OptiMOS-T2 |
| Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Part # Aliases | IPD5N6S4L8XT SP000374322 IPD50N06S4L08ATMA1 |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Mounting Type | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Unit Weight | 0.011640 oz |
| Package / Case | DPAK-3 (TO-252-3) |
| Configuration | Single |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 50 A |
| Rds On | 6.3 mOhms |
| Vgs - Gate - Source Voltage | - 16 V, + 16 V |
| Vgs th - Gate - Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 64 nC |
| Pd - Power Dissipation | 71 W |
| Channel Mode | Enhancement |
| Fall Time | 8 ns |
| Rise Time | 2 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 45 ns |
| Typical Turn - On Delay Time | 9 ns |
Übersicht
Description
The IPD50N06S4L-08 is a high-performance N-channel MOSFET designed for power management applications. With a voltage rating of 60V and a continuous drain current of 50A, it is suitable for use in various applications, including DC-DC converters, motor drivers, and power supplies. Its low RDS(on) (drain-source on-resistance) minimizes conduction losses, enhancing efficiency in switching applications.
The device features a rugged construction with a maximum gate-to-source voltage of ±20V, ensuring reliability under varying conditions. The IPD50N06S4L-08 is packaged in a TO-220 form factor, facilitating effective heat dissipation and easy mounting on heatsinks.
With its fast switching speed and low gate charge, it enables high-frequency operation, making it ideal for modern energy-efficient systems. Overall, the IPD50N06S4L-08 is a versatile MOSFET suitable for engineers looking to optimize the performance of their electronic designs.
The device features a rugged construction with a maximum gate-to-source voltage of ±20V, ensuring reliability under varying conditions. The IPD50N06S4L-08 is packaged in a TO-220 form factor, facilitating effective heat dissipation and easy mounting on heatsinks.
With its fast switching speed and low gate charge, it enables high-frequency operation, making it ideal for modern energy-efficient systems. Overall, the IPD50N06S4L-08 is a versatile MOSFET suitable for engineers looking to optimize the performance of their electronic designs.
Features
The IPD50N06S4L-08 is a N-channel MOSFET designed for high-performance applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 50A, providing robust performance in power applications.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of around 8mΩ, which helps minimize power loss and improve efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, typically around 2-4V, allowing for easier drive with lower gate voltages.
5. Package Type: It is available in a TO-220 package, which facilitates efficient heat dissipation.
6. Fast Switching: The device supports fast switching speeds, making it suitable for applications like DC-DC converters and motor drives.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for power management, switching, and amplification.
These features make the IPD50N06S4L-08 an excellent choice for modern power electronics designs.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 50A, providing robust performance in power applications.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of around 8mΩ, which helps minimize power loss and improve efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, typically around 2-4V, allowing for easier drive with lower gate voltages.
5. Package Type: It is available in a TO-220 package, which facilitates efficient heat dissipation.
6. Fast Switching: The device supports fast switching speeds, making it suitable for applications like DC-DC converters and motor drives.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for power management, switching, and amplification.
These features make the IPD50N06S4L-08 an excellent choice for modern power electronics designs.
Pinout
The IPD50N06S4L-08 is an N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source terminals.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is turned on.
3. Source (S): This terminal is connected to the ground or the negative side of the power supply in most applications.
The device is designed for high efficiency and fast switching applications, making it suitable for various power management tasks in electronics.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source terminals.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is turned on.
3. Source (S): This terminal is connected to the ground or the negative side of the power supply in most applications.
The device is designed for high efficiency and fast switching applications, making it suitable for various power management tasks in electronics.
Manufacturer
The IPD50N06S4L-08 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company is known for its innovative products in the fields of energy efficiency, mobility, and security, catering to various industries such as automotive, industrial, and consumer electronics. Infineon plays a significant role in advancing technologies for a sustainable future, focusing on solutions that enhance energy efficiency and enable the transition to renewable energy sources. As a key player in the semiconductor industry, Infineon is recognized for its high-quality components, including MOSFETs like the IPD50N06S4L-08, which are used in various applications requiring efficient power conversion and management.
Application
The IPD50N06S4L-08 is an N-channel MOSFET primarily used in applications such as power management, motor drives, and switch-mode power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for DC-DC converters, battery management systems, and electronic load control. Additionally, it is utilized in automotive applications, including electric vehicle powertrains and lighting systems, as well as in industrial automation and consumer electronics for efficient power distribution and conversion tasks.
Package
The IPD50N06S4L-08 is typically packaged in a TO-220 form factor. This package type is designed for efficient thermal dissipation and is commonly used for power MOSFETs in various applications.
