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IPD60R600PFD7S
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HerstellerInfineon-Technologien
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Herstellerteil #IPD60R600PFD7S
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Auf Lager7912
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
Übersicht
Description
The device is packaged in a DPAK format, which facilitates efficient thermal management and ease of PCB mounting. Its integrated body diode provides a path for reverse current, enhancing its reliability in various circuit configurations. The IPD60R600PFD7S is particularly favored in industrial and automotive applications due to its robustness and efficiency, contributing to improved overall system performance and energy savings.
Equivalent
Features
1. Voltage Rating: 600V maximum drain-source voltage (V_DS).
2. Current Rating: Supports continuous drain current up to 60A, making it suitable for high-power applications.
3. Low R_DS(on): Features a low on-resistance of around 0.6 ohms, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Designed for rapid switching, ideal for applications like power supplies and DC-DC converters.
5. Package Type: Housed in a TO-247 package, facilitating effective thermal management.
6. High Temperature Performance: Operates efficiently across a wide temperature range, ensuring reliability in demanding environments.
7. Gate Charge (Q_g): Low gate charge for reduced drive losses, improving overall system efficiency.
These attributes make the IPD60R600PFD7S suitable for various industrial applications, including motor drives and renewable energy systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET and turns it on or off based on the voltage applied.
2. Drain (D): The output pin where the load is connected. The current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative terminal of the power supply. It serves as the return path for the current when the device is conducting.
This MOSFET is notable for its low on-resistance and high voltage handling capabilities, making it suitable for various high-performance applications in power electronics.