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IPD70N10S3L-12
+StücklisteMOSFETs N-Ch 100V 70A DPAK-2 OptiMOS-T
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HerstellerInfineon-Technologien
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Herstellerteil #IPD70N10S3L-12
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Datenblatt IPD70N10S3L-12 DataSheet
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Auf Lager16046
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
Übersicht
Description
Key specifications include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 70A, making it robust for high-power requirements. The IPD70N10S3L-12 features a low R_DS(on) value, which minimizes power losses, and is optimized for reduced gate charge, improving efficiency in high-frequency applications.
This component is housed in a TO-252 package, which is compact and suitable for surface-mount designs, enhancing thermal performance. Overall, the IPD70N10S3L-12 offers a balance of efficiency, performance, and reliability, making it a preferred choice for engineers designing power electronic systems.
Equivalent
1. IRF540N by International Rectifier/Infineon
2. FQP30N06L by ON Semiconductor
3. STP55NF06 by STMicroelectronics
4. NTD4906N by ON Semiconductor
Always check the datasheet for exact specifications to ensure compatibility.
Features
1. Voltage Rating: It supports a drain-source voltage (V_ds) of 100V, making it suitable for medium to high voltage applications.
2. Current Capacity: The MOSFET can handle a continuous drain current (I_d) of up to 70A, providing robust performance for high power applications.
3. R_DS(on): It has a low on-resistance, typically around 12 mΩ, which enhances efficiency by reducing power losses during conduction.
4. Package: The MOSFET is housed in a TO-252 package, which is a surface-mount device, facilitating efficient thermal management and space-saving on printed circuit boards.
5. Technology: It utilizes trench technology, which optimizes the structure for lower on-resistance and improved switching performance.
6. Thermal Performance: It offers excellent thermal characteristics, supporting high power applications without the need for extensive cooling solutions.
This combination of features makes the IPD70N10S3L-12 ideal for use in applications like power supplies, motor drives, and DC-DC converters.
Pinout
1. Drain (D): The drain is the main terminal through which the output current flows. It is connected to the load in the circuit.
2. Source (S): The source is the terminal through which the input current enters the MOSFET. It is usually connected to ground in many applications.
3. Gate (G): The gate is the terminal used to control the MOSFET's switching state. By applying a voltage to the gate, the MOSFET can be turned on or off, thus controlling the current flow between the drain and the source.
This MOSFET is known for its low on-resistance and efficient switching capabilities, making it suitable for high-efficiency power applications.
Manufacturer
Application
1. Power Supplies: Utilized in DC-DC converters and power management circuits due to its low on-resistance and fast switching capabilities.
2. Motor Control: Suitable for driving motors in automotive and industrial applications, providing efficient control and reduced power loss.
3. LED Drivers: Used in LED lighting systems for efficient current regulation and control.
4. Battery Management: Applied in battery protection and management systems, ensuring efficient charge and discharge cycles.
5. Load Switches: Serves in switching applications for various electronic loads, enhancing system reliability and efficiency.