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IPD80N04S3-06
+StücklisteOPTLMOS N-CHANNEL POWER MOSFET
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HerstellerInfineon-Technologien
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Herstellerteil #IPD80N04S3-06
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Datenblatt IPD80N04S3-06 DataSheet
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Paket TO-252-3
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Auf Lager4555
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk |
| Part Status | Active |
Übersicht
Description
Key features of the IPD80N04S3-06 include a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of up to 80A. It also features a low R_DS(on) value, which helps minimize power loss and improve overall system efficiency. The package type is a DPAK (TO-252), which is surface-mount and is designed to handle significant power levels while offering good thermal performance.
Overall, the IPD80N04S3-06 provides an effective solution for power management in various electronic applications, balancing performance, and efficiency.
Equivalent
1. IRFZ44N
2. FDP7030BL
3. STP80NF03L
4. FDB7030BL
These alternatives generally share similar characteristics such as voltage and current ratings, but always ensure to check the datasheets to confirm compatibility with your specific application.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 80A, making it suitable for medium- to high-power applications.
2. R_DS(on): The MOSFET features a low on-resistance (R_DS(on)) of approximately 6 milliohms, ensuring efficient current flow and minimal power loss.
3. Technology: It is built using Infineon’s OptiMOS technology, known for enhancing performance in switching applications.
4. Package: The device is available in a TO-252 (DPAK) package, which provides a good balance between thermal performance and compact size.
5. Thermal Performance: Designed for superior thermal performance, it can handle high power dissipation.
6. Switching Characteristics: The MOSFET has fast switching capabilities, making it ideal for high-frequency applications.
These features make the IPD80N04S3-06 suitable for applications like motor drives, power supply systems, and DC-DC converters.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching operation. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the pin through which the main current flows from the source when the MOSFET is in the 'on' state. It's the primary output for the load current.
3. Source (S): This pin acts as the return path for the current flowing through the drain. It is connected to the ground or the lower potential side of the circuit.
The IPD80N04S3-06 is designed for low voltage applications and is commonly used in automotive and industrial applications for switching and power management.
Manufacturer
Application
1. Automotive Systems: Ideal for use in electronic control units, electric power steering, and battery management systems.
2. Power Supply Units: Utilized in the design of DC-DC converters, and uninterruptible power supplies (UPS).
3. Industrial Equipment: Suitable for motor control, robotics, and automation systems.
4. Consumer Electronics: Employed in power management for devices like laptops and TVs.
5. Renewable Energy Systems: Used in solar inverter designs and energy storage systems.
These applications benefit from the MOSFET's low on-resistance and robust thermal performance.