IPD80N04S3-06

Abbildungen dienen nur als Referenz

IPD80N04S3-06

+Stückliste

OPTLMOS N-CHANNEL POWER MOSFET

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package / Case Bulk
Part Status Active

Übersicht

Description

The IPD80N04S3-06 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It is part of the OptiMOS™ family from Infineon Technologies, known for its low on-state resistance and high-speed switching capabilities. The MOSFET is typically used in applications such as DC-DC converters, synchronous rectification in SMPS (Switched-Mode Power Supplies), and automotive power systems.
Key features of the IPD80N04S3-06 include a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of up to 80A. It also features a low R_DS(on) value, which helps minimize power loss and improve overall system efficiency. The package type is a DPAK (TO-252), which is surface-mount and is designed to handle significant power levels while offering good thermal performance.
Overall, the IPD80N04S3-06 provides an effective solution for power management in various electronic applications, balancing performance, and efficiency.

Equivalent

The IPD80N04S3-06 is a N-channel MOSFET. Equivalent products include:
1. IRFZ44N
2. FDP7030BL
3. STP80NF03L
4. FDB7030BL
These alternatives generally share similar characteristics such as voltage and current ratings, but always ensure to check the datasheets to confirm compatibility with your specific application.

Features

The IPD80N04S3-06 is a power MOSFET designed for high-performance applications. Here are its key features:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 80A, making it suitable for medium- to high-power applications.
2. R_DS(on): The MOSFET features a low on-resistance (R_DS(on)) of approximately 6 milliohms, ensuring efficient current flow and minimal power loss.
3. Technology: It is built using Infineon’s OptiMOS technology, known for enhancing performance in switching applications.
4. Package: The device is available in a TO-252 (DPAK) package, which provides a good balance between thermal performance and compact size.
5. Thermal Performance: Designed for superior thermal performance, it can handle high power dissipation.
6. Switching Characteristics: The MOSFET has fast switching capabilities, making it ideal for high-frequency applications.
These features make the IPD80N04S3-06 suitable for applications like motor drives, power supply systems, and DC-DC converters.

Pinout

The IPD80N04S3-06 is a power MOSFET from Infineon Technologies. It typically comes in a TO-252 package, which is a DPAK surface-mount package. This package usually has a 3-pin configuration:
1. Gate (G): This pin is used to control the MOSFET's switching operation. By applying a voltage to the gate, you can turn the MOSFET on or off.

2. Drain (D): This is the pin through which the main current flows from the source when the MOSFET is in the 'on' state. It's the primary output for the load current.
3. Source (S): This pin acts as the return path for the current flowing through the drain. It is connected to the ground or the lower potential side of the circuit.
The IPD80N04S3-06 is designed for low voltage applications and is commonly used in automotive and industrial applications for switching and power management.

Manufacturer

The IPD80N04S3-06 is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components. The company produces semiconductors for various applications including automotive, industrial power control, power management, digital security, and communications. Infineon's products are used in consumer electronics, automotive systems, industrial applications, and more. They are known for their innovation in power electronics and microcontrollers, offering solutions that enhance energy efficiency, mobility, and security.

Application

The IPD80N04S3-06 is a power MOSFET commonly used in various applications due to its high efficiency and fast switching capabilities. Key application areas include:
1. Automotive Systems: Ideal for use in electronic control units, electric power steering, and battery management systems.
2. Power Supply Units: Utilized in the design of DC-DC converters, and uninterruptible power supplies (UPS).
3. Industrial Equipment: Suitable for motor control, robotics, and automation systems.
4. Consumer Electronics: Employed in power management for devices like laptops and TVs.
5. Renewable Energy Systems: Used in solar inverter designs and energy storage systems.
These applications benefit from the MOSFET's low on-resistance and robust thermal performance.

Package

The IPD80N04S3-06 is a MOSFET that comes in a DPAK (TO-252) package type.

Produkte, die mit IPD80N04S3-06 zusammenhängen