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IPD90N06S4L-03
+StücklisteMOSFETs N-Ch 60V 90A DPAK-2 OptiMOS-T2
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HerstellerInfineon-Technologien
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Herstellerteil #IPD90N06S4L-03
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Datenblatt IPD90N06S4L-03 DataSheet
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Auf Lager18529
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | Cut Tape |
| Standard Pack Qty | 2500 |
Übersicht
Description
The IPD90N06S4L-03 is a power MOSFET manufactured by Infineon Technologies, designed for high-efficiency power switching applications. This component is part of the OptiMOS™ lineup, known for its low on-state resistance and high current-carrying capability, making it suitable for applications like DC-DC converters and motor control.
Key features of the IPD90N06S4L-03 include:
1. Voltage Rating: Typically, it has a drain-source voltage (V_DS) of 60V.
2. Current Rating: It supports a continuous drain current (I_D) of around 90A.
3. Low On-State Resistance: With an R_DS(on) as low as 3.0 mΩ, it ensures minimal power loss during operation.
4. Efficient Thermal Management: The MOSFET is designed for efficient heat dissipation, enhancing reliability in high-power applications.
5. Package: It comes in a lead-free TO-252 package, suitable for surface mount technology (SMT).
Overall, the IPD90N06S4L-03 is ideal for applications demanding high efficiency and compact design, providing robust performance in demanding environments.
Key features of the IPD90N06S4L-03 include:
1. Voltage Rating: Typically, it has a drain-source voltage (V_DS) of 60V.
2. Current Rating: It supports a continuous drain current (I_D) of around 90A.
3. Low On-State Resistance: With an R_DS(on) as low as 3.0 mΩ, it ensures minimal power loss during operation.
4. Efficient Thermal Management: The MOSFET is designed for efficient heat dissipation, enhancing reliability in high-power applications.
5. Package: It comes in a lead-free TO-252 package, suitable for surface mount technology (SMT).
Overall, the IPD90N06S4L-03 is ideal for applications demanding high efficiency and compact design, providing robust performance in demanding environments.
Equivalent
The IPD90N06S4L-03 is a N-channel MOSFET. Equivalent products can include similar N-channel MOSFETs with comparable voltage, current, and RDS(on) specifications. Some possible equivalents are:
1. IRLZ44N from Infineon
2. FQP30N06L from ON Semiconductor
3. IRFZ44N from Vishay
4. STP55NF06 from STMicroelectronics
Ensure compatibility by checking the specific parameters and package types to match your application needs.
1. IRLZ44N from Infineon
2. FQP30N06L from ON Semiconductor
3. IRFZ44N from Vishay
4. STP55NF06 from STMicroelectronics
Ensure compatibility by checking the specific parameters and package types to match your application needs.
Features
The IPD90N06S4L-03 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. Here are its key features:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 90A, making it suitable for medium to high power applications.
2. Low On-Resistance: This MOSFET has a low R_DS(on), which minimizes conduction losses and improves efficiency in power conversion.
3. Fast Switching: The device offers fast switching speeds, enhancing performance in applications where rapid switching is crucial, such as in power supplies and motor drives.
4. Thermal Performance: It is designed to handle high power with efficient thermal management, often encapsulated in a package that aids in heat dissipation.
5. Robust Design: The MOSFET is built to withstand high energy pulses in the avalanche and commutation mode, enhancing reliability.
6. Applications: Suitable for use in DC-DC converters, automotive systems, motor control, and other power management applications.
These features make the IPD90N06S4L-03 a versatile choice for various high-efficiency power management solutions.
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 90A, making it suitable for medium to high power applications.
2. Low On-Resistance: This MOSFET has a low R_DS(on), which minimizes conduction losses and improves efficiency in power conversion.
3. Fast Switching: The device offers fast switching speeds, enhancing performance in applications where rapid switching is crucial, such as in power supplies and motor drives.
4. Thermal Performance: It is designed to handle high power with efficient thermal management, often encapsulated in a package that aids in heat dissipation.
5. Robust Design: The MOSFET is built to withstand high energy pulses in the avalanche and commutation mode, enhancing reliability.
6. Applications: Suitable for use in DC-DC converters, automotive systems, motor control, and other power management applications.
These features make the IPD90N06S4L-03 a versatile choice for various high-efficiency power management solutions.
Pinout
The IPD90N06S4L-03 is a power MOSFET manufactured by Infineon Technologies. It is housed in a TO-252-3 package, which features three pins. The primary function of this MOSFET is for switching applications, commonly used in automotive and industrial applications due to its low on-state resistance and high-speed switching capabilities.
The three pins of the IPD90N06S4L-03 correspond to the following functions:
1. Gate (G): The gate terminal controls the conductivity between the drain and source. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): The drain terminal is typically connected to the power supply. It is the terminal through which the current enters the MOSFET when it is in the 'on' state.
3. Source (S): The source terminal is connected to the ground or load in a circuit. It is the terminal through which the current exits the MOSFET.
This MOSFET is designed for low-voltage applications, with a maximum drain-source voltage of 60V and a continuous drain current of up to 90A.
The three pins of the IPD90N06S4L-03 correspond to the following functions:
1. Gate (G): The gate terminal controls the conductivity between the drain and source. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): The drain terminal is typically connected to the power supply. It is the terminal through which the current enters the MOSFET when it is in the 'on' state.
3. Source (S): The source terminal is connected to the ground or load in a circuit. It is the terminal through which the current exits the MOSFET.
This MOSFET is designed for low-voltage applications, with a maximum drain-source voltage of 60V and a continuous drain current of up to 90A.
Manufacturer
The IPD90N06S4L-03 is manufactured by Infineon Technologies. Infineon Technologies is a German semiconductor manufacturer that specializes in producing a wide range of electronic components. The company is known for its innovations in power semiconductors, automotive electronics, security ICs, and embedded systems. Infineon serves various industries, including automotive, industrial power control, power management, and digital security solutions. It is one of the leading companies in the semiconductor industry, providing essential components for numerous electronic applications worldwide.
Application
The IPD90N06S4L-03 is a power MOSFET commonly used in automotive and industrial applications. It is suitable for applications requiring efficient power management and switching, such as motor drives, DC-DC converters, and power management in automotive systems. Its low on-resistance and fast switching capabilities make it ideal for applications where energy efficiency and compact size are critical. Additionally, it can be used in power supply circuits and battery management systems, where high current handling and thermal performance are necessary. Its robustness and reliability make it a versatile component in various power electronic applications.
Package
The IPD90N06S4L-03 is a MOSFET transistor, and it typically comes in a TO-252 package type, also known as DPAK. This package is a surface-mount package known for its compact size and efficient heat dissipation, making it suitable for high-power applications.
