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IPD90N06S4L03ATMA2
+StücklisteMOSFET N-CH 60V 90A TO252-31
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HerstellerInfineon-Technologien
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Herstellerteil #IPD90N06S4L03ATMA2
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Datenblatt IPD90N06S4L03ATMA2 DataSheet
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Auf Lager21877
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Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 90A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 3.5mOhm @ 90A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 90µA |
| Gate Charge(Qg)(Max) @ Vgs | 170 nC @ 10 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 13000 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 |
Übersicht
Description
The IPD90N06S4L03ATMA2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It belongs to the OptiMOS range, which is designed for high-efficiency power management applications. This specific model is characterized by its low on-state resistance and high current-carrying capability, making it suitable for demanding applications such as DC-DC converters, motor drives, and other power management systems.
Key features include:
1. N-channel MOSFET: Suitable for switching applications where high efficiency and fast switching speeds are required.
2. Low On-Resistance (Rds(on)): Offers efficient performance by minimizing power loss during operation.
3. High Current Capacity: Can handle high current loads, making it ideal for power-intensive applications.
4. Wide Range of Applications: Used in automotive, industrial, and consumer electronics due to its robust performance.
The component is available in a TO-252 package, which aids in efficient heat dissipation. Its overall design and specifications make it a versatile and reliable choice for engineers working with advanced power management systems.
Key features include:
1. N-channel MOSFET: Suitable for switching applications where high efficiency and fast switching speeds are required.
2. Low On-Resistance (Rds(on)): Offers efficient performance by minimizing power loss during operation.
3. High Current Capacity: Can handle high current loads, making it ideal for power-intensive applications.
4. Wide Range of Applications: Used in automotive, industrial, and consumer electronics due to its robust performance.
The component is available in a TO-252 package, which aids in efficient heat dissipation. Its overall design and specifications make it a versatile and reliable choice for engineers working with advanced power management systems.
Equivalent
The IPD90N06S4L-03 from Infineon is a N-channel MOSFET. Equivalent products include the IRFZ44N from International Rectifier, the FQP30N06L from ON Semiconductor, and the STP55NF06 from STMicroelectronics. Ensure to compare key parameters such as voltage, current ratings, Rds(on), and package type when selecting equivalents to ensure compatibility with your application requirements. Always refer to datasheets for detailed comparisons.
Features
The IPD90N06S4L03ATMA2 is a power MOSFET designed for various electronic applications. Here are its key features:
1. N-channel MOSFET: It is an N-channel enhancement mode field-effect transistor.
2. Voltage and Current Ratings: Supports a drain-source voltage (V_DS) of up to 60V and a continuous drain current (I_D) of 90A.
3. Low On-state Resistance: Features a low R_DS(on) value to ensure efficient power management and minimal power loss.
4. Package: Comes housed in a TO-220 package, facilitating easy mounting and good thermal performance.
5. Fast Switching: Designed for fast switching capabilities, enhancing performance in high-speed applications.
6. Thermal Resistance: Provides low thermal resistance, promoting effective heat dissipation.
7. Applications: Suitable for use in power management, motor control, DC-DC converters, and other high-frequency switching applications.
8. Rugged Design: Built to handle significant power loads while maintaining reliability in various electronic circuits.
These features make the IPD90N06S4L03ATMA2 a versatile component for power electronic systems requiring efficient and reliable switching capabilities.
1. N-channel MOSFET: It is an N-channel enhancement mode field-effect transistor.
2. Voltage and Current Ratings: Supports a drain-source voltage (V_DS) of up to 60V and a continuous drain current (I_D) of 90A.
3. Low On-state Resistance: Features a low R_DS(on) value to ensure efficient power management and minimal power loss.
4. Package: Comes housed in a TO-220 package, facilitating easy mounting and good thermal performance.
5. Fast Switching: Designed for fast switching capabilities, enhancing performance in high-speed applications.
6. Thermal Resistance: Provides low thermal resistance, promoting effective heat dissipation.
7. Applications: Suitable for use in power management, motor control, DC-DC converters, and other high-frequency switching applications.
8. Rugged Design: Built to handle significant power loads while maintaining reliability in various electronic circuits.
These features make the IPD90N06S4L03ATMA2 a versatile component for power electronic systems requiring efficient and reliable switching capabilities.
Pinout
The IPD90N06S4L03ATMA2 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is a part of the OptiMOS™ 4 family, which is optimized for low voltage applications.
- Pin Count: Typically, a standard MOSFET like the IPD90N06S4L03ATMA2 comes in a TO-252 (also known as DPAK) package, which generally has 3 pins and a tab.
- Functions:
- Gate (G): This pin is used to control the operation of the MOSFET. Applying a voltage to the gate turns the MOSFET on or off.
- Drain (D): This is the pin through which the main current flows from the source when the MOSFET is activated.
- Source (S): This pin is connected to the ground or the load of the circuit, completing the circuit for current to flow through when the MOSFET is on.
- Tab: The metal tab can also be connected to the drain and serves as a heat sink.
This MOSFET is typically used in applications requiring high efficiency and fast switching, such as in power management for computing and telecommunications.
- Pin Count: Typically, a standard MOSFET like the IPD90N06S4L03ATMA2 comes in a TO-252 (also known as DPAK) package, which generally has 3 pins and a tab.
- Functions:
- Gate (G): This pin is used to control the operation of the MOSFET. Applying a voltage to the gate turns the MOSFET on or off.
- Drain (D): This is the pin through which the main current flows from the source when the MOSFET is activated.
- Source (S): This pin is connected to the ground or the load of the circuit, completing the circuit for current to flow through when the MOSFET is on.
- Tab: The metal tab can also be connected to the drain and serves as a heat sink.
This MOSFET is typically used in applications requiring high efficiency and fast switching, such as in power management for computing and telecommunications.
Manufacturer
The IPD90N06S4L03ATMA2 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor company that specializes in designing and manufacturing a wide range of semiconductor solutions, including microcontrollers, sensors, power management ICs, and security ICs, among others. It serves various industries such as automotive, industrial power control, power management & multimarket, and digital security solutions. The company is known for its innovations in energy efficiency, mobility, and security technologies.
Application
The IPD90N06S4L03ATMA2 is a power MOSFET designed for various applications. It is commonly used in automotive and industrial sectors due to its high efficiency and reliability. Key application areas include:
1. Automotive Systems: Ideal for power management, electric motor control, and battery management systems.
2. Switching Power Supplies: Used for efficient power conversion in DC-DC converters and SMPS.
3. Motor Drives: Suitable for controlling DC motors in industrial automation and robotics.
4. Load Switches: Functions as a switch for disconnecting loads in power distribution systems.
5. Inverters: Utilized in DC to AC conversion processes, particularly in renewable energy applications.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
1. Automotive Systems: Ideal for power management, electric motor control, and battery management systems.
2. Switching Power Supplies: Used for efficient power conversion in DC-DC converters and SMPS.
3. Motor Drives: Suitable for controlling DC motors in industrial automation and robotics.
4. Load Switches: Functions as a switch for disconnecting loads in power distribution systems.
5. Inverters: Utilized in DC to AC conversion processes, particularly in renewable energy applications.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
Package
The IPD90N06S4L-03ATMA2 is a MOSFET transistor in a TO-252-3 (DPAK) package.
