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IPG20N06S2L50AATMA1
+StücklisteMOSFET 2N-CH 55V 20A 8TDSON
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HerstellerInfineon-Technologien
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Herstellerteil #IPG20N06S2L50AATMA1
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Paket VDFN-8
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Auf Lager6087
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Bulk |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain(Id) @ 25°C | 20A |
| Rds On(Max) @ Id Vgs | 50mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 19µA |
| Gate Charge(Qg)(Max) @ Vgs | 17nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 560pF @ 25V |
| Power - Max | 51W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
