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MOSFET 2N-CH 60V 20A 8TDSON
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HerstellerInfineon-Technologien
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Herstellerteil #IPG20N06S415ATMA1
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Datenblatt IPG20N06S415ATMA1 DataSheet
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Paket VDFN-8
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Auf Lager3613
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Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Bulk |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Discontinued at Digi-Key |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 20A |
| Rds On(Max) @ Id Vgs | 15.5mOhm @ 17A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 20µA |
| Gate Charge(Qg)(Max) @ Vgs | 29nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 2260pF @ 25V |
| Power - Max | 50W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
