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IPP023N10N5
+StücklisteMOSFETs N-Ch 100V 120A TO220-3
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HerstellerInfineon-Technologien
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Herstellerteil #IPP023N10N5
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Datenblatt IPP023N10N5 DataSheet
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Auf Lager23606
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | Tube |
| Standard Pack Qty | 500 |
Übersicht
Description
The IPP023N10N5 is a power MOSFET designed for high-efficiency, high-frequency applications. Key features often include low on-state resistance, high-speed switching capability, and enhanced thermal performance. It is commonly used in power management applications, including DC-DC converters, motor controllers, and other systems requiring efficient power switching.
These MOSFETs are critical in reducing energy loss and improving overall system efficiency. They can handle significant power levels, making them suitable for both consumer electronics and industrial applications. When selecting this MOSFET, engineers consider parameters such as voltage rating, current capacity, and thermal characteristics to ensure optimal performance within their specific circuit design. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Equivalent
1. IRLB3034 - by International Rectifier, similar voltage and current ratings.
2. NTB30N10 - by ON Semiconductor, a comparable alternative.
3. BSC026N10NS5 - by Infineon, another potential equivalent.
4. STP270N10 - by STMicroelectronics, offering similar specifications.
Always check the datasheets for detailed comparisons to ensure compatibility with your application.
Features
1. N-channel MOSFET: Designed for switching and amplification in electronic devices.
2. Voltage Rating: It typically supports a maximum drain-source voltage of 100V, allowing it to handle substantial power loads.
3. Current Handling: Can handle continuous drain current up to 23A, making it suitable for high-current applications.
4. Low On-Resistance: Features a low R_DS(on) value, which reduces power loss and improves efficiency by minimizing the resistance when the MOSFET is in the "on" state.
5. Fast Switching: Offers rapid switching capabilities that are beneficial for applications requiring efficient power conversion and minimal energy loss.
6. Thermal Performance: Designed with good thermal characteristics to manage heat dissipation effectively.
7. Packaging: Typically available in a TO-220 or similar package, facilitating easy integration into circuits and providing robust mechanical stability.
These attributes make the IPP023N10N5 suitable for applications in automotive systems, power supplies, and other high-efficiency electronic devices.
Pinout
1. Gate (G): This pin is used to control the MOSFET by applying a voltage to switch it on or off.
2. Drain (D): This is the terminal where the main current flows out of the MOSFET when it is in the on state.
3. Source (S): This is the terminal where the main current flows into the MOSFET.
This MOSFET is designed for high-efficiency power switching applications. It features low on-state resistance and is commonly used in power supply circuits and other applications where efficient power management is crucial.