Abbildungen dienen nur als Referenz
IPP075N15N3G
+Stückliste-
HerstellerInfineon-Technologien
-
Herstellerteil #IPP075N15N3G
-
Auf Lager3913
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| OperatingTemperature | -55℃~+175℃ |
| RDS(on) | 7.2mΩ@10V,100A |
| DraintoSourceVoltage | 150V |
| Pd-PowerDissipation | 300W |
| Current-ContinuousDrain(Id) | 100A |
| ReverseTransferCapacitance(Crss@Vds) | 10pF@75V |
| InputCapacitance(Ciss@Vds) | 5.47nF@75V |
| GateThresholdVoltage(Vgs(th)@Id) | 3V |
| GateCharge(Qg) | 93nC@10V |
| Number | 1 N-channel |
Übersicht
Description
The IPP075N15N3G is a high-performance N-channel MOSFET designed for various power management applications. It features a low on-resistance (R_DS(on)), which minimizes power losses and enhances efficiency in switching applications. With a voltage rating of 150V and a continuous current rating of 75A, this MOSFET is suitable for high-voltage and high-current applications, including motor drives, power supplies, and converters.
The device is constructed using advanced technology, enabling fast switching speeds and high thermal performance. Its low gate charge allows for efficient drive capabilities, making it compatible with various driver circuits. The IPP075N15N3G is housed in a TO-220 package, which facilitates effective heat dissipation, essential for maintaining performance under load.
This MOSFET is ideal for designers looking to optimize their circuits for power efficiency and thermal management. Its robust specifications and reliability make it a popular choice in industrial and consumer electronics.
The device is constructed using advanced technology, enabling fast switching speeds and high thermal performance. Its low gate charge allows for efficient drive capabilities, making it compatible with various driver circuits. The IPP075N15N3G is housed in a TO-220 package, which facilitates effective heat dissipation, essential for maintaining performance under load.
This MOSFET is ideal for designers looking to optimize their circuits for power efficiency and thermal management. Its robust specifications and reliability make it a popular choice in industrial and consumer electronics.
Equivalent
The IPP075N15N3G is an N-channel MOSFET. Equivalent products include the IRF3205, STP75NF15, and FQP75N15. Other alternatives are the BSC075N15 and AOD2956. Always check the specific voltage, current ratings, and package type to ensure compatibility for your application.
Features
The IPP075N15N3G is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, suitable for various power applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 75A, allowing for robust performance in demanding environments.
3. R_DS(on): The on-resistance is notably low, around 0.075 ohms at V_GS = 10V, which enhances efficiency by reducing power losses during operation.
4. Gate Charge: It has a low gate charge (Q_g) of approximately 25nC, facilitating faster switching speeds and improving efficiency in high-frequency applications.
5. Thermal Performance: The package is designed for effective thermal dissipation, with a maximum junction temperature of 175°C.
6. Package Type: Typically available in a TO-220 package, it allows for easy mounting and heatsinking.
These features make the IPP075N15N3G ideal for use in power supplies, motor drivers, and various industrial applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, suitable for various power applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 75A, allowing for robust performance in demanding environments.
3. R_DS(on): The on-resistance is notably low, around 0.075 ohms at V_GS = 10V, which enhances efficiency by reducing power losses during operation.
4. Gate Charge: It has a low gate charge (Q_g) of approximately 25nC, facilitating faster switching speeds and improving efficiency in high-frequency applications.
5. Thermal Performance: The package is designed for effective thermal dissipation, with a maximum junction temperature of 175°C.
6. Package Type: Typically available in a TO-220 package, it allows for easy mounting and heatsinking.
These features make the IPP075N15N3G ideal for use in power supplies, motor drivers, and various industrial applications.
Pinout
The IPP075N15N3G is a power MOSFET from Infineon Technologies with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin allows the current to flow out of the MOSFET. It connects to the load.
3. Source (S): This pin is the terminal through which the current enters the MOSFET.
The IPP075N15N3G is designed for high-efficiency applications and has a maximum drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) rating of 75A, making it suitable for various power management applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin allows the current to flow out of the MOSFET. It connects to the load.
3. Source (S): This pin is the terminal through which the current enters the MOSFET.
The IPP075N15N3G is designed for high-efficiency applications and has a maximum drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) rating of 75A, making it suitable for various power management applications.
Manufacturer
The IPP075N15N3G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in the development and production of semiconductor and system solutions, focusing on automotive, industrial power control, and security technologies. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, which are widely used in various applications such as automotive electronics, renewable energy systems, and industrial automation. Infineon is recognized for its commitment to sustainability and efficient energy management, contributing to advancements in the global semiconductor industry.
Application
The IPP075N15N3G is an N-channel MOSFET primarily used in power electronics applications. Key application areas include:
1. Power Supply Circuits: Used in DC-DC converters and power management systems.
2. Motor Control: Employed in driving motors for robotics and industrial automation.
3. Switching Regulators: Functions in efficient switching applications for enhanced energy management.
4. Inverters: Utilized in renewable energy systems, such as solar inverters.
5. Lighting: Implemented in LED drivers and dimming circuits.
Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency designs.
1. Power Supply Circuits: Used in DC-DC converters and power management systems.
2. Motor Control: Employed in driving motors for robotics and industrial automation.
3. Switching Regulators: Functions in efficient switching applications for enhanced energy management.
4. Inverters: Utilized in renewable energy systems, such as solar inverters.
5. Lighting: Implemented in LED drivers and dimming circuits.
Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency designs.
Package
The IPP075N15N3G is packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
