IPP120N20NFD

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IPP120N20NFD

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MOSFETs N-Ch 200V 84A TO220-3

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Attribut Wert
Packaging Tube
Standard Pack Qty 500

Übersicht

Description

The IPP120N20NFD is a specific model of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in electronic circuits. This component is manufactured by Infineon Technologies and is known for its high efficiency and reliability in switching applications. It is part of the OptiMOS series, which is optimized for low on-state resistance, making it suitable for applications requiring high power density and efficiency, such as power supplies, DC-DC converters, and motor drives.
Key specifications of the IPP120N20NFD include a drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) of 120A, and a low on-resistance (R_DS(on)) of approximately 4.5 mΩ. These features contribute to reduced power loss and heat generation during operation, improving overall system performance.
The TO-220 package type allows for efficient heat dissipation, making it suitable for use in environments where thermal management is critical. Its high-speed switching capabilities make it an ideal choice for modern power electronics, where efficiency and compact size are paramount.

Equivalent

The IPP120N20NFD is a power MOSFET from Infineon Technologies. Equivalent products might include:
1. STMicroelectronics: STP160N75F3
2. ON Semiconductor: NTP75N06
3. Vishay: SiHP9N60D
4. Fairchild: FDP047N10
Ensure that the specifications such as voltage, current, and package type match your requirements when considering equivalents. Always consult the datasheets for compatibility.

Features

The IPP120N20NFD is a high-performance N-channel MOSFET developed by Infineon Technologies. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of approximately 120A, making it suitable for high-power applications.
2. Low On-State Resistance: The MOSFET offers low R_DS(on) values, which reduces power loss and improves efficiency in switching applications.
3. Fast Switching Speed: Designed for high-speed switching, it minimizes switching losses, enhancing overall system performance.
4. Thermal Management: Built with an optimized package for effective heat dissipation, it supports high power density designs.
5. Robust Design: The device features a rugged silicon design that provides high avalanche energy and improved device reliability.
6. Applications: Commonly used in power supplies, motor drives, and various industrial applications where efficient power management is crucial.
These attributes make the IPP120N20NFD a reliable choice for designers seeking efficiency and performance in demanding electronic environments.

Pinout

The IPP120N20NFD is a power MOSFET, specifically an N-channel MOSFET, manufactured by Infineon Technologies. It typically comes in a TO-220 package, which has 3 pins. The three pins are:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows out of the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which the main current enters the MOSFET.
This MOSFET is used in various applications, including power supplies and motor drives, due to its ability to handle high currents and voltages. It features low on-resistance, which provides efficient power handling and reduced energy loss in electronic circuits.

Manufacturer

The IPP120N20NFD is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in designing, developing, and manufacturing a wide range of semiconductor solutions. These solutions are used in various applications, including automotive, industrial power control, power management, and digital security solutions. Infineon is known for its innovations in power semiconductors, microcontrollers, sensors, and security ICs, catering to sectors such as automotive, industrial, and consumer electronics.

Application

The IPP120N20NFD is a power MOSFET commonly used in various applications due to its high efficiency and reliability. Key application areas include:
1. Power Supply Systems: Utilized in switch-mode power supplies for efficient energy conversion.
2. Motor Drives: Employed in electric motor control systems for industrial and automotive applications.
3. Inverters: Used in renewable energy systems, such as solar inverters, for converting DC to AC.
4. LED Lighting: Incorporated in LED driver circuits for efficient power management.
5. DC-DC Converters: Applied in voltage regulation and conversion circuits.
Its high current handling capabilities and low on-resistance make it suitable for high-power and high-frequency applications.

Package

The IPP120N20NFD is a power MOSFET produced by Infineon Technologies, and it typically comes in a TO-220 package. The TO-220 is a type of semiconductor package that is used for high-power and high-voltage components, featuring a metal tab for heat dissipation.

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