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IPP120N20NFD
+StücklisteMOSFETs N-Ch 200V 84A TO220-3
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HerstellerInfineon-Technologien
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Herstellerteil #IPP120N20NFD
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Datenblatt IPP120N20NFD DataSheet
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Auf Lager15578
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | Tube |
| Standard Pack Qty | 500 |
Übersicht
Description
Key specifications of the IPP120N20NFD include a drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) of 120A, and a low on-resistance (R_DS(on)) of approximately 4.5 mΩ. These features contribute to reduced power loss and heat generation during operation, improving overall system performance.
The TO-220 package type allows for efficient heat dissipation, making it suitable for use in environments where thermal management is critical. Its high-speed switching capabilities make it an ideal choice for modern power electronics, where efficiency and compact size are paramount.
Equivalent
1. STMicroelectronics: STP160N75F3
2. ON Semiconductor: NTP75N06
3. Vishay: SiHP9N60D
4. Fairchild: FDP047N10
Ensure that the specifications such as voltage, current, and package type match your requirements when considering equivalents. Always consult the datasheets for compatibility.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of approximately 120A, making it suitable for high-power applications.
2. Low On-State Resistance: The MOSFET offers low R_DS(on) values, which reduces power loss and improves efficiency in switching applications.
3. Fast Switching Speed: Designed for high-speed switching, it minimizes switching losses, enhancing overall system performance.
4. Thermal Management: Built with an optimized package for effective heat dissipation, it supports high power density designs.
5. Robust Design: The device features a rugged silicon design that provides high avalanche energy and improved device reliability.
6. Applications: Commonly used in power supplies, motor drives, and various industrial applications where efficient power management is crucial.
These attributes make the IPP120N20NFD a reliable choice for designers seeking efficiency and performance in demanding electronic environments.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows out of the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which the main current enters the MOSFET.
This MOSFET is used in various applications, including power supplies and motor drives, due to its ability to handle high currents and voltages. It features low on-resistance, which provides efficient power handling and reduced energy loss in electronic circuits.
Manufacturer
Application
1. Power Supply Systems: Utilized in switch-mode power supplies for efficient energy conversion.
2. Motor Drives: Employed in electric motor control systems for industrial and automotive applications.
3. Inverters: Used in renewable energy systems, such as solar inverters, for converting DC to AC.
4. LED Lighting: Incorporated in LED driver circuits for efficient power management.
5. DC-DC Converters: Applied in voltage regulation and conversion circuits.
Its high current handling capabilities and low on-resistance make it suitable for high-power and high-frequency applications.