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IPP80P03P4L-04
+StücklisteMOSFETs P-Ch -30V 80A TO220-3 OptiMOS-P2
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HerstellerInfineon-Technologien
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Herstellerteil #IPP80P03P4L-04
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Datenblatt IPP80P03P4L-04 DataSheet
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Auf Lager8966
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | Tube |
| Standard Pack Qty | 500 |
Übersicht
Description
Key features often include a high maximum drain-source voltage, significant continuous drain current capacity, and the ability to operate at high temperatures. These characteristics make it suitable for demanding industrial and automotive applications. The IPP80P03P4L-04 typically comes in an industry-standard package for easy integration into various electronic circuits. Understanding its electrical characteristics and thermal management requirements is crucial for optimal performance. Always refer to the manufacturer's datasheet for specific technical details and to ensure it meets the requirements of your particular application.
Equivalent
1. IRF4905 from Infineon Technologies
2. FQP27P06 from ON Semiconductor
3. STP60PF06 from STMicroelectronics
Always verify cross-references with electrical characteristics and package compatibility for your specific application.
Features
1. N-channel MOSFET: It is an N-channel MOSFET, which typically offers higher efficiency compared to P-channel counterparts in similar applications.
2. Low On-Resistance: This component has low on-resistance, which minimizes power loss and heat generation, improving overall efficiency.
3. High Current Capability: It supports high current flow, making it suitable for demanding power applications.
4. Fast Switching Speed: Designed for rapid switching, it enhances performance in high-frequency applications.
5. Robust Design: Built to endure high temperatures and stress, contributing to its reliability in various environments.
6. Compact Package: The device is housed in a compact package, making it suitable for space-constrained applications.
These features make the IPP80P03P4L-04 suitable for applications like power supplies, motor drives, and other power management solutions requiring efficient and reliable switching.
Pinout
1. Gate (G): This pin is used to control the MOSFET by applying a voltage. When a sufficient negative voltage relative to the source is applied, the device switches on, allowing current to flow between the drain and source.
2. Drain (D): This pin is the terminal where current flows out of the MOSFET when it is in the conducting state.
3. Source (S): This pin is the terminal where current enters into the MOSFET. For a P-channel MOSFET, the source is typically connected to the higher voltage side of the circuit.
Additionally, the MOSFET's tab, which is connected to the drain, is often considered an additional connection point for the drain terminal for heat dissipation purposes. The IPP80P03P4L-04 is used for switching and amplification in various electronic circuits.