IPT015N10N5ATMA1

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IPT015N10N5ATMA1

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MOSFET N-CH 100V 300A 8HSOF

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 300A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 1.5mOhm @ 150A, 10V
Vgs(th)(Max) @ Id 3.8V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 211 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 16000 pF @ 50 V
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1

Übersicht

Equivalent

Equivalent products to IPT015N10N5ATMA1 (100V, 150A N-channel MOSFET) include:
- Infineon IPT015N10N5 (same series)
- Infineon IPB015N10N5 (similar specs, different package)
- Vishay SiHG50N100E (100V, 140A)
- STMicroelectronics STH150N10F7 (100V, 150A)
Check datasheets for exact compatibility in your application.

Pinout

The IPT015N10N5ATMA1 is a 100V N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connected to ground (low-voltage side).
Key Features:
- 100V drain-source voltage (VDS)
- 150A continuous current (ID)
- Low on-resistance (RDS(on)) for high efficiency
- Designed for power switching in automotive and industrial applications.
The TO-252 package is surface-mountable with a thermal pad for heat dissipation.

Manufacturer

The IPT015N10N5ATMA1 is a power MOSFET manufactured by Infineon Technologies, a leading German semiconductor company specializing in power management, automotive, and industrial applications. Infineon is known for high-performance components, including transistors, microcontrollers, and sensors, serving sectors like automotive, renewable energy, and IoT.
This specific MOSFET is part of Infineon's OptiMOS™ 5 family, designed for high efficiency in power conversion (e.g., DC-DC converters, motor drives). It features low on-resistance and fast switching, making it suitable for demanding applications.
Company Profile:
- Name: Infineon Technologies
- Headquarters: Neubiberg, Germany
- Focus: Power semiconductors, security ICs, automotive electronics.

Application

The IPT015N10N5ATMA1 is a power MOSFET designed for high-efficiency switching applications. Key application areas include:
- Automotive Systems: Used in electric vehicles (EVs) for battery management, DC-DC converters, and motor control.
- Industrial Power Supplies: Efficient power conversion in SMPS (Switched-Mode Power Supplies) and inverters.
- Renewable Energy: Solar inverters and wind power systems for energy conversion.
- Consumer Electronics: High-performance power management in devices like servers and gaming consoles.
Its low on-resistance and high current handling make it ideal for high-power, high-frequency switching.

Package

The IPT015N10N5ATMA1 is a power MOSFET in a TO-263-7 (D²PAK) package. This surface-mount package offers high power dissipation and is commonly used in high-current applications. It features a low on-resistance (RDS(on)) and is designed for efficient switching performance. The package includes a metal tab for improved thermal management.

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