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IPW65R080CFD
+StücklisteMOSFETs N-Ch 650V 43.3A TO247-3 CoolMOS CFD2
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HerstellerInfineon-Technologien
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Herstellerteil #IPW65R080CFD
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Datenblatt IPW65R080CFD DataSheet
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Auf Lager22225
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | Tube |
| Standard Pack Qty | 240 |
Übersicht
Description
The IPW65R080CFD features a fast body diode, which minimizes reverse recovery time and losses, enhancing its performance in hard-switching topologies. It is also optimized for reduced electromagnetic interference (EMI), contributing to cleaner and more reliable operation in electronic circuits. The product is available in a TO-247 package, providing flexibility for design and integration into various systems. Overall, the IPW65R080CFD is a versatile and efficient choice for power management in high-performance electronic devices.
Equivalent
1. STMicroelectronics' STW77N65M5 from their MDmesh series.
2. NXP's PSMN0R9-65BS from the NextPower Live series.
3. ON Semiconductor's FDPF51N60NT from the PowerTrench series.
These equivalents should be verified for exact specification matches as variations may exist in voltage, current, and package type.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 37A at 25°C, providing robust performance for demanding applications.
3. R_DS(on): It features a low on-state resistance of 80 mΩ, which helps reduce conduction losses and improve efficiency.
4. Technology: Utilizes CoolMOS™ CFD technology, which enhances fast switching performance and improves overall efficiency.
5. Switching: Designed for high-speed switching, suitable for applications such as power supplies, inverters, and motor drives.
6. Thermal Performance: Offers good thermal performance with a maximum operating junction temperature of 150°C.
7. Package: Typically available in a TO-247 package, which supports efficient heat dissipation.
These features make the IPW65R080CFD ideal for applications where high efficiency, fast switching, and high power density are crucial.
Pinout
The IPW65R080CFD is available in a TO-247 package. The TO-247 package generally has a 3-pin configuration:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate modulates the conductivity between the drain and source.
2. Drain (D): This pin is where the load current enters the MOSFET when it is in the on state. It is connected to the high voltage side of the circuit.
3. Source (S): This pin is where the current exits the MOSFET and is typically connected to the ground or low voltage side of the circuit.
These pins facilitate the basic operation of the MOSFET, allowing it to act as a switch or amplifier in electronic circuits.
Manufacturer
Infineon is known for its advancements in power semiconductors and is a leader in the development and innovation of technologies that contribute to energy efficiency, mobility, and security. The company operates globally, serving diverse industries with its broad portfolio of products designed to meet the needs of both consumer and industrial applications.
Application
1. Switch Mode Power Supplies (SMPS): Used in power converters for efficiency and compact design.
2. Uninterruptible Power Supplies (UPS): Ensures reliable power delivery in backup systems.
3. Renewable Energy Systems: Utilized in solar inverters and wind turbine converters.
4. Electric Vehicle Chargers: Assists in efficient charging systems.
5. Industrial Motor Drives: Enhances performance and control in motor systems.
6. Lighting Systems: Supports LED drivers due to efficient switching capabilities.
These applications benefit from the device's low on-resistance, fast switching speed, and high voltage handling.