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IR2127STRPBF
+StücklisteIR2127S - GATE DRIVER
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HerstellerInternationaler Gleichrichter
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Herstellerteil #IR2127STRPBF
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Datenblatt IR2127STRPBF DataSheet
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Paket SOIC-8
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Auf Lager5968
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk |
| Part Status | Active |
| Driven Configuration | High-Side or Low-Side |
| Channel Type | Single |
| Number of Drivers | 1 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 12V ~ 20V |
| Logic Voltage - VILVIH | 0.8V, 3V |
| Current - Peak Output(Source Sink) | 250mA, 500mA |
| Input Type | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | 600 V |
| Rise / Fall Time(Typ) | 80ns, 40ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features of the IR2127STRPBF include:
1. High-Side and Low-Side Drive Capability: It can drive both high-side and low-side power transistors, making it versatile for various switching applications.
2. Protection Functions: The IC typically includes built-in features such as under-voltage lockout, over-current protection, and fault reporting, enhancing the reliability and safety of the power systems.
3. Fast Switching: It supports rapid switching speeds, which improves the overall efficiency of power conversion applications by reducing transition losses.
4. Bootstrap Operation: The IC often utilizes a bootstrap method to efficiently drive high-side transistors without additional power supplies.
Overall, the IR2127STRPBF is well-suited for applications in motor drives, power inverters, and various controlled power systems, where efficient and reliable transistor switching is required.
Equivalent
Features
1. High Voltage Capability: It can handle up to 600V, making it suitable for a wide range of applications requiring high-voltage operation.
2. Gate Drive: The device provides a gate drive output for efficiently turning on and off power MOSFETs or IGBTs.
3. Under-Voltage Lockout (UVLO): Ensures that the gate drive is enabled only when the supply voltage is above a certain threshold, protecting the MOSFET or IGBT from operating in low-voltage conditions.
4. Low Propagation Delay: Offers fast switching speed due to its low propagation delay, which enhances the efficiency of switching applications.
5. Protection Features: Includes protection against overcurrent conditions, enhancing device reliability and safety.
6. Compact Package: Available in a compact surface-mount package, making it suitable for space-constrained applications.
These features make the IR2127STRPBF a versatile choice for driving power transistors in industrial and automotive applications.
Pinout
Key functions of the IR2127STRPBF include:
1. High-side Driver: It can drive high-side MOSFETs and IGBTs, providing the necessary gate voltage to switch these devices on and off.
2. Floating Channel: Capable of operating up to 600V, allowing it to handle high-voltage applications.
3. Protection Features: Includes under-voltage lockout (UVLO) to prevent operation when the supply voltage is too low.
4. Bootstrap Circuitry: It supports bootstrap operation, which enables the floating supply for the high-side driver.
The IR2127STRPBF is optimized for fast switching and robust performance, making it suitable for various demanding power management applications.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Enhances the efficiency in power conversion.
2. Motor Drives: Provides effective control in electric motor applications.
3. Uninterruptible Power Supplies (UPS): Ensures reliable power management.
4. Industrial Inverters: Supports robust power regulation and control.
5. Renewable Energy Systems: Facilitates efficient energy conversion in solar inverters and wind turbines.
6. Battery Management Systems: Assists in protecting and controlling battery modules.
These applications benefit from the component's ability to deliver reliable gate driving and protection features.