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IRF1310NPBF
+StücklisteMOSFET N-CH 100V 42A TO220AB
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HerstellerInfineon-Technologien
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Herstellerteil #IRF1310NPBF
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Spezifikationen
| Attribut | Wert |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
| Power Dissipation (Max) | 160W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRF1310 |
Übersicht
Description
The IRF1310NPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features low on-resistance (RDS(on)), allowing for minimal power loss during operation, making it ideal for power management in devices like switching power supplies, DC-DC converters, and motor control circuits.
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) rating of 33A, and a low gate threshold voltage (VGS(th)), which enhances its performance in low-voltage applications. The MOSFET is housed in a TO-220 package, facilitating easy heat dissipation and mounting.
The IRF1310NPBF’s fast switching capabilities and thermal stability make it suitable for both consumer and industrial applications, where efficiency and reliability are critical. It is also RoHS-compliant, ensuring it meets environmental standards. Overall, the IRF1310NPBF is a versatile component for engineers seeking effective solutions in power electronics design.
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) rating of 33A, and a low gate threshold voltage (VGS(th)), which enhances its performance in low-voltage applications. The MOSFET is housed in a TO-220 package, facilitating easy heat dissipation and mounting.
The IRF1310NPBF’s fast switching capabilities and thermal stability make it suitable for both consumer and industrial applications, where efficiency and reliability are critical. It is also RoHS-compliant, ensuring it meets environmental standards. Overall, the IRF1310NPBF is a versatile component for engineers seeking effective solutions in power electronics design.
Equivalent
The IRF1310NPBF is a N-channel MOSFET. Equivalent products include the STP16NF06, IRF3205, and FQP30N06L. When selecting a substitute, ensure similar voltage ratings, current capabilities, and on-resistance specifications to ensure compatibility with your application. Always check the datasheets for precise parameters.
Features
The IRF1310NPBF is an N-channel MOSFET designed for various power switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Continuous drain current (I_D) up to 50A.
3. R_DS(on): Low on-resistance typically around 0.045 ohms, which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, allowing for easier driving.
5. Fast Switching: Suitable for high-speed applications due to its low gate charge.
6. Package: Available in a TO-220 package, facilitating good thermal performance.
7. Applications: Ideal for use in power supplies, motor controls, and automotive applications.
These features make the IRF1310NPBF a robust choice for efficient power management in electronic circuits.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Continuous drain current (I_D) up to 50A.
3. R_DS(on): Low on-resistance typically around 0.045 ohms, which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, allowing for easier driving.
5. Fast Switching: Suitable for high-speed applications due to its low gate charge.
6. Package: Available in a TO-220 package, facilitating good thermal performance.
7. Applications: Ideal for use in power supplies, motor controls, and automotive applications.
These features make the IRF1310NPBF a robust choice for efficient power management in electronic circuits.
Pinout
The IRF1310NPBF is a N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which current enters the MOSFET from the load. It's connected to the high side of the circuit.
3. Source (S): This terminal allows current to flow out of the MOSFET to the ground or the low side of the circuit.
The IRF1310NPBF is designed for high-speed switching applications and can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 25A. Its low on-resistance (R_DS(on)) allows for efficient operation in power applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which current enters the MOSFET from the load. It's connected to the high side of the circuit.
3. Source (S): This terminal allows current to flow out of the MOSFET to the ground or the low side of the circuit.
The IRF1310NPBF is designed for high-speed switching applications and can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 25A. Its low on-resistance (R_DS(on)) allows for efficient operation in power applications.
Manufacturer
The manufacturer of the IRF1310NPBF is Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in designing and manufacturing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security ICs. The company serves various industries such as automotive, industrial, communication, and consumer electronics. Infineon is known for its innovations in power management and energy efficiency, contributing to the development of applications in electric vehicles, renewable energy, and IoT technologies.
Application
The IRF1310NPBF is an N-channel MOSFET commonly used in power management applications. Its primary application areas include:
1. DC-DC Converters: Used in buck and boost converters for efficient voltage regulation.
2. Power Switching: Ideal for high-speed switching in power supplies and motor control circuits.
3. Load Switching: Utilized in load management for appliances and industrial equipment.
4. Class D Audio Amplifiers: Employed in audio applications for efficient amplification.
5. Power Inverters: Used in renewable energy systems, such as solar inverters.
Its high efficiency and fast switching capabilities make it suitable for these applications.
1. DC-DC Converters: Used in buck and boost converters for efficient voltage regulation.
2. Power Switching: Ideal for high-speed switching in power supplies and motor control circuits.
3. Load Switching: Utilized in load management for appliances and industrial equipment.
4. Class D Audio Amplifiers: Employed in audio applications for efficient amplification.
5. Power Inverters: Used in renewable energy systems, such as solar inverters.
Its high efficiency and fast switching capabilities make it suitable for these applications.
Package
The IRF1310NPBF is packaged in a TO-220 format, which is a robust and widely used package type for power MOSFETs. This package provides good thermal performance and is suitable for various applications requiring high power handling.
