IRF3205PBF

Abbildungen dienen nur als Referenz

IRF3205PBF

+Stückliste

IRF3205 - 12V-300V N-CHANNEL POW

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package / Case Bulk
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain(Id) @ 25°C 110A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 8mOhm @ 62A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 146 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 3247 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Übersicht

Description

The IRF3205PBF is an N-channel power MOSFET from Infineon, designed for high-current, high-efficiency switching applications. Key features include:
- Voltage Rating: 55V
- Current Handling: 110A (continuous), 390A (pulsed)
- Low On-Resistance (RDS(on)): 8.0mΩ (max at 10V VGS)
- Fast Switching: Suitable for DC-DC converters, motor drives, and power management.
- Package: TO-220AB (through-hole), facilitating heat dissipation.
It operates with a gate threshold voltage (VGS(th)) of 2–4V, making it compatible with 5V/12V logic. The PBF suffix indicates lead-free (RoHS-compliant) construction.
Common uses include:
- High-power inverters
- Battery protection circuits
- Automotive applications
Ensure proper heat sinking and gate drive (≥4.5V) for optimal performance.

Equivalent

Equivalent products to the IRF3205PBF (55V, 110A, 8mΩ MOSFET) include:
- IRL40B209 (40V, 180A, 4.5mΩ)
- IRLB4132PBF (40V, 156A, 4.2mΩ)
- STP80NF55-06 (55V, 80A, 6mΩ)
- FDP8878 (30V, 118A, 3.3mΩ)
- AUIRF3205Z (55V, 110A, 8mΩ, improved thermal performance)
Check datasheets for exact compatibility in your application.

Features

The IRF3205PBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 55V
- Current Rating: 110A (continuous) @ 25°C
- Low On-Resistance (RDS(on)): 8.0 mΩ max @ VGS = 10V
- Fast Switching: Suitable for high-efficiency applications
- Avalanche Energy Rated: Robust against inductive spikes
- Logic-Level Gate Drive: Compatible with 5V drive (but performs best at 10V)
- TO-220AB Package: Easy to mount with good thermal performance
Ideal for power switching, motor control, and DC-DC converters.

Pinout

The IRF3205PBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation (typically driven by 4V–10V).
2. Drain (D) – Connects to the load (handles up to 55V and 110A).
3. Source (S) – Ground/reference terminal.
Key features:
- Low on-resistance (RDS(on)): 8.0 mΩ max at VGS = 10V.
- High current handling: 110A continuous.
- Fast switching: Suitable for power applications like motor drives and DC-DC converters.
Concise and functional summary.

Application

The IRF3205PBF, a power MOSFET, is widely used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge drivers, PWM controllers.
3. Automotive Systems – Electronic ignition, LED drivers.
4. Solar Inverters – Efficient power conversion.
5. Battery Management – Charge/discharge control.
6. Audio Amplifiers – High-power output stages.
Its low on-resistance (1.7mΩ) and high current rating (110A) make it ideal for high-efficiency, high-power applications.

Package

The IRF3205PBF is packaged in a TO-220AB through-hole package. This package type is widely used for power MOSFETs, offering good thermal performance and ease of mounting on heat sinks. It has three leads (gate, drain, source) and is suitable for high-current applications. The "PBF" suffix indicates it is lead-free and RoHS compliant.

Produkte, die mit IRF3205PBF zusammenhängen

  • Schnellangebot

  • Senden Sie Ihre Angebotsanfrage für IRF3205PBF Mit diesem Formular können Sie uns innerhalb von 12 Stunden kontaktieren.