Abbildungen dienen nur als Referenz
IRF3710PBF
+StücklisteMOSFET N-CH 100V 57A TO220AB
-
HerstellerInfineon-Technologien
-
Herstellerteil #IRF3710PBF
-
Datenblatt IRF3710PBF DataSheet
-
Paket TO-220-3
-
Auf Lager4770
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 57A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 23mOhm @ 28A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 130 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3130 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Übersicht
Description
The IRF3710PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification applications. This particular model is designed by Infineon Technologies and is part of their HEXFET® power MOSFET family, known for efficiency and reliability.
Key features of the IRF3710PBF include:
1. Voltage and Current Ratings: It can handle a maximum drain-to-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 57A, making it suitable for high-power applications.
2. Low On-Resistance: It has a low R_DS(on) value, around 23 mΩ, which minimizes power loss and improves efficiency.
3. Package Type: It typically comes in a TO-220 package, which aids in effective heat dissipation.
4. Applications: The IRF3710PBF is used in various applications, including motor drives, inverters, and power supplies, due to its robust performance and thermal stability.
This MOSFET is favored for its fast switching capabilities and low power dissipation, making it an excellent choice for both industrial and consumer electronics.
Key features of the IRF3710PBF include:
1. Voltage and Current Ratings: It can handle a maximum drain-to-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 57A, making it suitable for high-power applications.
2. Low On-Resistance: It has a low R_DS(on) value, around 23 mΩ, which minimizes power loss and improves efficiency.
3. Package Type: It typically comes in a TO-220 package, which aids in effective heat dissipation.
4. Applications: The IRF3710PBF is used in various applications, including motor drives, inverters, and power supplies, due to its robust performance and thermal stability.
This MOSFET is favored for its fast switching capabilities and low power dissipation, making it an excellent choice for both industrial and consumer electronics.
Equivalent
The IRF3710PBF is an N-channel MOSFET, and equivalent products include:
1. STP55NF06from STMicroelectronics
2. FDP3651U from ON Semiconductor
3. FQP50N06 from Fairchild Semiconductor (now ON Semiconductor)
4. NTD4302N from ON Semiconductor
5. IPP057N08N3 from Infineon Technologies
Ensure compatibility by checking the datasheets for matching electrical characteristics and package types.
1. STP55NF06from STMicroelectronics
2. FDP3651U from ON Semiconductor
3. FQP50N06 from Fairchild Semiconductor (now ON Semiconductor)
4. NTD4302N from ON Semiconductor
5. IPP057N08N3 from Infineon Technologies
Ensure compatibility by checking the datasheets for matching electrical characteristics and package types.
Features
The IRF3710PBF is a N-channel MOSFET known for its efficiency and reliability in various applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 57A, making it suitable for high-power applications.
2. Low On-State Resistance: The MOSFET offers low R_DS(on) values, which minimizes power losses and improves overall efficiency in switching operations.
3. High-Speed Switching: Designed for fast switching speeds, it enhances performance in applications requiring rapid switching cycles.
4. Thermal Performance: Built with advanced semiconductor technology, it ensures good thermal performance, which aids in maintaining stability under high-load conditions.
5. Lead-Free and RoHS Compliant: The IRF3710PBF meets environmental standards, being lead-free and compliant with RoHS requirements.
6. Applications: Commonly used in power management, motor controls, and switching regulators due to its robustness and reliability.
These attributes make the IRF3710PBF a versatile choice for a variety of electronic applications requiring efficient power management.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 57A, making it suitable for high-power applications.
2. Low On-State Resistance: The MOSFET offers low R_DS(on) values, which minimizes power losses and improves overall efficiency in switching operations.
3. High-Speed Switching: Designed for fast switching speeds, it enhances performance in applications requiring rapid switching cycles.
4. Thermal Performance: Built with advanced semiconductor technology, it ensures good thermal performance, which aids in maintaining stability under high-load conditions.
5. Lead-Free and RoHS Compliant: The IRF3710PBF meets environmental standards, being lead-free and compliant with RoHS requirements.
6. Applications: Commonly used in power management, motor controls, and switching regulators due to its robustness and reliability.
These attributes make the IRF3710PBF a versatile choice for a variety of electronic applications requiring efficient power management.
Pinout
The IRF3710PBF is a power MOSFET typically used for switching applications. This specific MOSFET comes in a TO-220 package and has a 3-pin configuration. Here are the functions of each pin:
1. Gate (G): This pin controls the MOSFET's operation. By applying a suitable voltage to the gate, the MOSFET can be turned on or off, allowing control of current flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the "on" state. It connects to the main load in the circuit.
3. Source (S): This is the terminal through which current exits the MOSFET. It is typically connected to ground or the return path in the circuit.
The IRF3710PBF is widely used in applications like motor control, power supplies, and other high-speed switching devices due to its high efficiency and fast switching capabilities.
1. Gate (G): This pin controls the MOSFET's operation. By applying a suitable voltage to the gate, the MOSFET can be turned on or off, allowing control of current flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the "on" state. It connects to the main load in the circuit.
3. Source (S): This is the terminal through which current exits the MOSFET. It is typically connected to ground or the return path in the circuit.
The IRF3710PBF is widely used in applications like motor control, power supplies, and other high-speed switching devices due to its high efficiency and fast switching capabilities.
Manufacturer
The IRF3710PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a variety of electronic components and systems. The company produces semiconductors for various applications, including automotive, industrial, communications, consumer, and security electronics. Infineon is known for its innovation in power electronics, microcontrollers, sensors, and digital security solutions.
Application
The IRF3710PBF is a power MOSFET commonly used in various applications due to its capabilities in handling high current and voltage. Key application areas include:
1. Power Supply Units: Utilized in switch mode power supplies for efficient power conversion.
2. Motor Control: Employed in controlling DC motors and actuators, ideal for automotive and industrial applications.
3. Inverters: Used in DC to AC conversion systems in solar inverters and uninterruptible power supplies (UPS).
4. Lighting: Implemented in high-intensity discharge lamp ballasts and LED drivers.
5. Audio Amplifiers: Suitable for Class D audio amplifiers due to its fast switching capabilities.
6. Battery Management: Used in battery protection circuits and charging systems.
These applications leverage its high efficiency, reliability, and fast switching performance.
1. Power Supply Units: Utilized in switch mode power supplies for efficient power conversion.
2. Motor Control: Employed in controlling DC motors and actuators, ideal for automotive and industrial applications.
3. Inverters: Used in DC to AC conversion systems in solar inverters and uninterruptible power supplies (UPS).
4. Lighting: Implemented in high-intensity discharge lamp ballasts and LED drivers.
5. Audio Amplifiers: Suitable for Class D audio amplifiers due to its fast switching capabilities.
6. Battery Management: Used in battery protection circuits and charging systems.
These applications leverage its high efficiency, reliability, and fast switching performance.
Package
The IRF3710PBF is a TO-220 package type. It is a commonly used package for power MOSFETs, offering a good balance of size, cost, and thermal performance, suitable for through-hole mounting on printed circuit boards.
