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IRF5803TRPBF
+StücklisteMOSFET P-CH 40V 3.4A MICRO6
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HerstellerInfineon-Technologien
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Herstellerteil #IRF5803TRPBF
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Datenblatt IRF5803TRPBF DataSheet
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Auf Lager4720
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Spezifikationen
| Attribut | Wert |
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRF5803 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro6™(TSOP-6) |
| Package | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
The IRF5803TRPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It is part of the HEXFET® lineup manufactured by Infineon Technologies, formerly International Rectifier. This MOSFET is notable for its low on-resistance, which results in lower conduction losses and increased efficiency in power conversion circuits.
Key specifications include a maximum drain-source voltage (V_ds) of 30V, a continuous drain current (I_d) of approximately 82A, and a low gate charge, making it suitable for high-speed switching. It comes in a standard DPAK surface-mount package, which is conducive for compact and space-constrained designs. The IRF5803TRPBF is typically used in applications like DC-DC converters, motor drives, and load switches where high efficiency and reliability are critical.
With its lead-free and RoHS-compliant status, it's also an environmentally friendly choice for modern electronics. The combination of these features makes it a versatile component in power management systems.
Key specifications include a maximum drain-source voltage (V_ds) of 30V, a continuous drain current (I_d) of approximately 82A, and a low gate charge, making it suitable for high-speed switching. It comes in a standard DPAK surface-mount package, which is conducive for compact and space-constrained designs. The IRF5803TRPBF is typically used in applications like DC-DC converters, motor drives, and load switches where high efficiency and reliability are critical.
With its lead-free and RoHS-compliant status, it's also an environmentally friendly choice for modern electronics. The combination of these features makes it a versatile component in power management systems.
Equivalent
The IRF5803TRPBF is a MOSFET, and equivalent products would typically have similar specifications such as threshold voltage, on-resistance, and package type. Some possible equivalents include the Vishay Siliconix SI4484DY, ON Semiconductor NTD4906N, and Infineon IRF540N. Always verify with datasheets to ensure that the replacements match the original component's specifications for your application.
Features
The IRF5803TRPBF is a HEXFET power MOSFET from Infineon Technologies, designed for efficient power management in various applications. Key features include:
1. N-Channel MOSFET: It features an N-channel configuration, known for high efficiency in switching applications.
2. Low On-Resistance: The device has a low on-resistance, minimizing power loss and heat generation.
3. High Current Capacity: It supports high current loads, making it suitable for demanding applications.
4. Fast Switching Speed: The MOSFET offers fast switching capabilities, enhancing performance in dynamic environments.
5. Avalanche Energy Rated: It can handle energy spikes, improving reliability.
6. Surface Mount Package: Comes in a D2PAK package, facilitating easy integration in circuit designs.
7. Lead-Free: The component is RoHS compliant, containing no lead, which is beneficial for environmentally friendly designs.
These features make the IRF5803TRPBF suitable for use in applications requiring efficient power management, such as DC-DC converters, motor drives, and power supply circuits.
1. N-Channel MOSFET: It features an N-channel configuration, known for high efficiency in switching applications.
2. Low On-Resistance: The device has a low on-resistance, minimizing power loss and heat generation.
3. High Current Capacity: It supports high current loads, making it suitable for demanding applications.
4. Fast Switching Speed: The MOSFET offers fast switching capabilities, enhancing performance in dynamic environments.
5. Avalanche Energy Rated: It can handle energy spikes, improving reliability.
6. Surface Mount Package: Comes in a D2PAK package, facilitating easy integration in circuit designs.
7. Lead-Free: The component is RoHS compliant, containing no lead, which is beneficial for environmentally friendly designs.
These features make the IRF5803TRPBF suitable for use in applications requiring efficient power management, such as DC-DC converters, motor drives, and power supply circuits.
Pinout
The IRF5803TRPBF is a power MOSFET transistor often used in various electronic applications for switching and amplification purposes. It comes in a typical D-PAK (TO-252) package, which is common for surface-mount components.
Pin Count and Function:
- Pin Count: The IRF5803TRPBF typically has 3 main pins.
- Functions:
1. Gate (G): This pin is used to control the MOSFET's conduction state. A voltage applied to the gate controls the flow of current through the device.
2. Drain (D): This pin is the main path for the current flow through the MOSFET when it is in the 'on' state.
3. Source (S): This is the pin through which current exits the MOSFET. It is usually connected to the ground in most applications.
The IRF5803TRPBF is designed for high-efficiency power management and is used in applications requiring low on-state resistance and fast switching.
Pin Count and Function:
- Pin Count: The IRF5803TRPBF typically has 3 main pins.
- Functions:
1. Gate (G): This pin is used to control the MOSFET's conduction state. A voltage applied to the gate controls the flow of current through the device.
2. Drain (D): This pin is the main path for the current flow through the MOSFET when it is in the 'on' state.
3. Source (S): This is the pin through which current exits the MOSFET. It is usually connected to the ground in most applications.
The IRF5803TRPBF is designed for high-efficiency power management and is used in applications requiring low on-state resistance and fast switching.
Manufacturer
The IRF5803TRPBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor company that focuses on developing and manufacturing a wide range of electronic components. Their products are widely used in various applications, including automotive, industrial power control, power management, chip card, and security systems. As a prominent player in the semiconductor industry, Infineon specializes in creating innovative solutions that enhance energy efficiency, mobility, and security.
Application
The IRF5803TRPBF is a power MOSFET that is commonly used in various applications due to its efficient switching capabilities and low on-resistance. Typical application areas include:
1. Power Supply Systems: Used in DC-DC converters and switching regulators.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Load Switching: Employed in high-frequency power management and load switching tasks.
4. Battery Management: Utilized in battery protection circuits and management systems.
5. Telecommunications: Implemented in RF amplifiers and network power systems.
6. Consumer Electronics: Integrated into power management units of gadgets for energy efficiency.
These applications benefit from the MOSFET's high-speed switching and robust thermal performance.
1. Power Supply Systems: Used in DC-DC converters and switching regulators.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Load Switching: Employed in high-frequency power management and load switching tasks.
4. Battery Management: Utilized in battery protection circuits and management systems.
5. Telecommunications: Implemented in RF amplifiers and network power systems.
6. Consumer Electronics: Integrated into power management units of gadgets for energy efficiency.
These applications benefit from the MOSFET's high-speed switching and robust thermal performance.
Package
The IRF5803TRPBF is a MOSFET that comes in a D-PAK (TO-252) surface-mount package.
