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IRF5806TRPBF
+StücklisteMOSFET P-CH 20V 4A MICRO6
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HerstellerInfineon-Technologien
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Herstellerteil #IRF5806TRPBF
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Datenblatt IRF5806TRPBF DataSheet
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Auf Lager4265
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 86mOhm @ 4A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 11.4 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 594 pF @ 15 V |
| PowerDissipation(Max) | 2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro6™(TSOP-6) |
