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IRF640,127
+StücklisteMOSFET N-CH 200V 16A TO220AB
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HerstellerNXP USA Inc.
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Herstellerteil #IRF640,127
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Datenblatt IRF640,127 DataSheet
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Auf Lager6209
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Spezifikationen
| Attribut | Wert |
| Supplier | NXP USA Inc. |
| Package | Tube |
| Series | TrenchMOS™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 16A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1850 pF @ 25 V |
| PowerDissipation(Max) | 136W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
