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IRF640S
+StücklisteMOSFET N-CH 200V 18A D2PAK
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HerstellerVishay Siliconix
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Herstellerteil #IRF640S
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Datenblatt IRF640S DataSheet
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Auf Lager18656
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package | Tube |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 25 V |
| PowerDissipation(Max) | 3.1W (Ta), 130W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
Übersicht
Description
The IRF640S is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It is part of the IRF640 series, known for its high efficiency and reliability in handling substantial power loads. The IRF640S is characterized by its N-channel configuration, which allows it to conduct when a positive voltage is applied to the gate relative to the source.
Key specifications of the IRF640S include:
- Drain-Source Voltage (V_DS): Typically around 200V, making it suitable for high-voltage applications.
- Continuous Drain Current (I_D): Approximately 18A, allowing it to handle significant current loads.
- Gate Threshold Voltage (V_GS): Around 2 to 4 volts, which determines the gate voltage required to turn the MOSFET on.
- R_DS(on): Low on-state resistance, contributing to efficient current flow and minimal power loss.
The IRF640S is widely used in applications such as power supplies, motor controllers, and audio amplifiers, where efficient switching and amplification are crucial. Its ruggedness and ability to handle high power make it a popular choice among designers and engineers.
Key specifications of the IRF640S include:
- Drain-Source Voltage (V_DS): Typically around 200V, making it suitable for high-voltage applications.
- Continuous Drain Current (I_D): Approximately 18A, allowing it to handle significant current loads.
- Gate Threshold Voltage (V_GS): Around 2 to 4 volts, which determines the gate voltage required to turn the MOSFET on.
- R_DS(on): Low on-state resistance, contributing to efficient current flow and minimal power loss.
The IRF640S is widely used in applications such as power supplies, motor controllers, and audio amplifiers, where efficient switching and amplification are crucial. Its ruggedness and ability to handle high power make it a popular choice among designers and engineers.
Equivalent
The IRF640S is an N-channel MOSFET. Equivalent products include the STP16NF06, FDP6670AL, and NTE2398. When seeking equivalents, ensure matching or exceeding specifications like voltage, current, on-resistance, and package type. Always verify with the datasheet to confirm suitability for your application.
Features
The IRF640S is an N-channel power MOSFET known for its efficiency and reliability in switching applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 18A, making it suitable for high-power applications.
2. R_DS(on) Value: The on-resistance is typically around 0.18 ohms, contributing to low power loss during operation.
3. Fast Switching: It offers fast switching speeds, which enhances performance in high-frequency applications.
4. Thermal Characteristics: The device is designed to handle significant power dissipation, with a maximum junction temperature of 175°C, supporting reliable operation under thermal stress.
5. Packaging: It is available in a D2PAK (TO-263) surface-mount package, which aids in efficient heat dissipation and compact design integration.
6. Applications: Commonly used in power supply circuits, motor control, and other high-efficiency applications, where robust performance and reliability are critical.
Overall, the IRF640S is valued for its balance of power handling, efficiency, and reliability in various electronic applications.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 18A, making it suitable for high-power applications.
2. R_DS(on) Value: The on-resistance is typically around 0.18 ohms, contributing to low power loss during operation.
3. Fast Switching: It offers fast switching speeds, which enhances performance in high-frequency applications.
4. Thermal Characteristics: The device is designed to handle significant power dissipation, with a maximum junction temperature of 175°C, supporting reliable operation under thermal stress.
5. Packaging: It is available in a D2PAK (TO-263) surface-mount package, which aids in efficient heat dissipation and compact design integration.
6. Applications: Commonly used in power supply circuits, motor control, and other high-efficiency applications, where robust performance and reliability are critical.
Overall, the IRF640S is valued for its balance of power handling, efficiency, and reliability in various electronic applications.
Pinout
The IRF640S is a N-channel MOSFET. It typically comes in a TO-263 (D2PAK) package, which has a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the flow of current between the drain and source. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the "on" state. It is connected to the load that the MOSFET is controlling.
3. Source (S): This pin is the exit point for the current. It is typically connected to ground in many applications.
Additionally, there is a metal tab on the TO-263 package that is often connected to the drain pin and helps in heat dissipation. The IRF640S is used in various applications like power management, motor control, and switching regulators due to its high current capacity and efficient switching properties.
1. Gate (G): This pin is used to control the flow of current between the drain and source. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the "on" state. It is connected to the load that the MOSFET is controlling.
3. Source (S): This pin is the exit point for the current. It is typically connected to ground in many applications.
Additionally, there is a metal tab on the TO-263 package that is often connected to the drain pin and helps in heat dissipation. The IRF640S is used in various applications like power management, motor control, and switching regulators due to its high current capacity and efficient switching properties.
Manufacturer
The IRF640S is manufactured by Infineon Technologies. Infineon is a semiconductor manufacturing company based in Germany. It is one of the leading companies in the semiconductor industry, focusing on automotive, industrial power control, power management & multimarket, and digital security solutions. Infineon designs and produces a wide range of semiconductor solutions, including microcontrollers, sensors, and power semiconductors, which are essential in various applications like automotive, industrial systems, and consumer electronics.
Application
The IRF640S is a power MOSFET commonly used in various applications due to its high efficiency and fast switching capabilities. Key application areas include:
1. Switching Power Supplies: Used in DC-DC converters and other power management systems.
2. Motor Drives: Controls the speed and torque of motors in industrial and consumer applications.
3. UPS Systems: Ensures rapid switching and efficiency in uninterruptible power supplies.
4. Lighting: Used in electronic ballasts and LED drivers for efficient lighting solutions.
5. Audio Amplifiers: Enhances performance in high-power amplifier circuits.
6. Inverters: Integral in DC to AC conversion for solar inverters and similar applications.
Its versatility in handling high currents and voltages makes it suitable for various electronic systems.
1. Switching Power Supplies: Used in DC-DC converters and other power management systems.
2. Motor Drives: Controls the speed and torque of motors in industrial and consumer applications.
3. UPS Systems: Ensures rapid switching and efficiency in uninterruptible power supplies.
4. Lighting: Used in electronic ballasts and LED drivers for efficient lighting solutions.
5. Audio Amplifiers: Enhances performance in high-power amplifier circuits.
6. Inverters: Integral in DC to AC conversion for solar inverters and similar applications.
Its versatility in handling high currents and voltages makes it suitable for various electronic systems.
Package
The IRF640S is a power MOSFET with a D2PAK (TO-263) package type. This package provides a compact and surface-mount design suitable for efficient heat dissipation and easy installation in electronic circuits.
