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IRF730PBF
+StücklisteMOSFET N-CH 400V 5.5A TO220AB
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HerstellerVishay Siliconix
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Herstellerteil #IRF730PBF
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Datenblatt IRF730PBF DataSheet
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Paket TO-220-3
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Auf Lager3840
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400 V |
| Current - Continuous Drain(Id) @ 25°C | 5.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1Ohm @ 3.3A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 700 pF @ 25 V |
| Power Dissipation (Max) | 74W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Übersicht
Description
The IRF730PBF is a N-channel power MOSFET designed for high-speed switching applications. Manufactured by Infineon Technologies, this device is part of the HEXFET® Power MOSFET family, known for its ruggedness and efficiency. The IRF730PBF features a maximum drain-source voltage (V_DS) of 400V and a continuous drain current (I_D) of 5.5A, making it suitable for medium to high-power applications. It has a low on-resistance (R_DS(on)) of approximately 1.5 ohms, minimizing power loss during operation.
This MOSFET comes in a TO-220 package, facilitating easy mounting and efficient thermal management. The device is designed to handle high-energy pulsed applications and is often used in power supply circuits, motor control, and various switching applications where efficiency and reliability are critical. Additionally, the IRF730PBF is RoHS compliant, ensuring it meets environmental standards for hazardous substances. Its robust performance and versatility make it a popular choice for engineers working on power electronics applications.
This MOSFET comes in a TO-220 package, facilitating easy mounting and efficient thermal management. The device is designed to handle high-energy pulsed applications and is often used in power supply circuits, motor control, and various switching applications where efficiency and reliability are critical. Additionally, the IRF730PBF is RoHS compliant, ensuring it meets environmental standards for hazardous substances. Its robust performance and versatility make it a popular choice for engineers working on power electronics applications.
Equivalent
The IRF730PBF is an N-channel MOSFET commonly used in power conversion applications. Equivalent products include the STMicroelectronics STP9NK50Z, Fairchild (now onsemi) FQP9N50C, and the Vishay Siliconix SiHF730. When selecting an equivalent, ensure that the voltage, current ratings, and package type match your application's requirements. Always check the datasheets for detailed specifications to ensure compatibility.
Features
The IRF730PBF is an N-channel power MOSFET designed for high-speed switching and efficient power management. Key features include:
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 400V and can handle a continuous drain current (I_D) of up to 5.5A at 25°C.
2. RDS(on): The MOSFET offers a low on-state resistance, typically around 0.75 ohms, which minimizes power loss and enhances efficiency.
3. Fast Switching: This component is designed for rapid switching, making it suitable for applications like DC-DC converters and power supply circuits.
4. Thermal Performance: It is capable of dissipating significant power, with a maximum power dissipation of around 74W, facilitated by its TO-220 package that supports good thermal management.
5. Ruggedness: The IRF730PBF is built to withstand high energy in avalanche and commutation modes, ensuring reliability in demanding applications.
6. Lead-Free: As indicated by the "PBF" suffix, the device complies with RoHS standards, being lead-free and environmentally friendly.
These features make the IRF730PBF suitable for a variety of high-voltage and high-power applications.
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 400V and can handle a continuous drain current (I_D) of up to 5.5A at 25°C.
2. RDS(on): The MOSFET offers a low on-state resistance, typically around 0.75 ohms, which minimizes power loss and enhances efficiency.
3. Fast Switching: This component is designed for rapid switching, making it suitable for applications like DC-DC converters and power supply circuits.
4. Thermal Performance: It is capable of dissipating significant power, with a maximum power dissipation of around 74W, facilitated by its TO-220 package that supports good thermal management.
5. Ruggedness: The IRF730PBF is built to withstand high energy in avalanche and commutation modes, ensuring reliability in demanding applications.
6. Lead-Free: As indicated by the "PBF" suffix, the device complies with RoHS standards, being lead-free and environmentally friendly.
These features make the IRF730PBF suitable for a variety of high-voltage and high-power applications.
Pinout
The IRF730PBF is a power MOSFET transistor. It typically comes in a TO-220 package with three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to trigger the MOSFET. A voltage applied to the gate controls the conductivity between the drain and source.
2. Drain (D): This is the pin through which the main current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): This pin is the return path for the main current flowing through the drain pin.
These pins are crucial in the operation of the MOSFET, allowing it to function as a switch or amplifier in electronic circuits. The IRF730PBF is typically used in applications requiring high-speed switching and efficiency in power management systems.
1. Gate (G): This pin is used to trigger the MOSFET. A voltage applied to the gate controls the conductivity between the drain and source.
2. Drain (D): This is the pin through which the main current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): This pin is the return path for the main current flowing through the drain pin.
These pins are crucial in the operation of the MOSFET, allowing it to function as a switch or amplifier in electronic circuits. The IRF730PBF is typically used in applications requiring high-speed switching and efficiency in power management systems.
Manufacturer
The IRF730PBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components and systems. The company produces semiconductors used in automotive, industrial, and consumer electronics, among other sectors. Infineon is known for its focus on innovation and sustainability, providing solutions for energy efficiency, mobility, and security. Their product portfolio includes power semiconductors, microcontrollers, sensors, and digital security solutions. Infineon is recognized as a leading player in the global semiconductor industry.
Application
The IRF730PBF is a power MOSFET widely used in various applications due to its high efficiency and fast switching capabilities. Common application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage conversion.
2. Motor Drives: Employed in controlling DC motors in industrial and consumer applications.
3. Inverters: Utilized in DC to AC inverter circuits for converting solar or battery power.
4. Amplifiers: Serves in audio amplifiers for high-power signal amplification.
5. LED Drivers: Used in driving high-power LEDs for efficient illumination solutions.
6. Battery Management: Plays a role in battery charging and protection circuits.
Its versatility makes it suitable for both consumer electronics and industrial applications.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage conversion.
2. Motor Drives: Employed in controlling DC motors in industrial and consumer applications.
3. Inverters: Utilized in DC to AC inverter circuits for converting solar or battery power.
4. Amplifiers: Serves in audio amplifiers for high-power signal amplification.
5. LED Drivers: Used in driving high-power LEDs for efficient illumination solutions.
6. Battery Management: Plays a role in battery charging and protection circuits.
Its versatility makes it suitable for both consumer electronics and industrial applications.
Package
The IRF730PBF is typically available in a TO-220 package, which is a type of through-hole, three-leaded package commonly used for power semiconductors like MOSFETs.
