IRF7351PBF

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IRF7351PBF

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MOSFET 2N-CH 60V 8A 8-SOIC

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Infineon Technologies
Package / Case Tube
Series HEXFET®
Part Status Discontinued at Digi-Key
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain(Id) @ 25°C 8A
Rds On(Max) @ Id Vgs 17.8mOhm @ 8A, 10V
Vgs(th)(Max) @ Id 4V @ 50µA
Gate Charge(Qg)(Max) @ Vgs 36nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 1330pF @ 30V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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