IRF830

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IRF830

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MOSFET N-CH 500V 4.5A TO220AB

  • HerstellerSTMikroelektronik

  • Herstellerteil #IRF830

  • Paket TO-220-3

  • Auf Lager1798

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Spezifikationen

Attribut Wert
Package Tube,Tube
Series PowerMESH™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 4.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.5Ohm @ 2.7A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 30 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 610 pF @ 25 V
PowerDissipation(Max) 100W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Übersicht

Description

The IRF830 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It is part of the IRF series produced by International Rectifier, now under Infineon Technologies. The IRF830 is designed for high-efficiency power management and is ideal for applications like power supplies, converters, and motor controllers.
Key specifications include a maximum drain-source voltage (V_ds) of 500V, a continuous drain current (I_d) of 4.5A, and a maximum power dissipation of about 75W. It features a low on-resistance, leading to reduced power loss and increased efficiency. The IRF830 is typically housed in a TO-220 package, which allows for easy mounting and effective heat dissipation.
This MOSFET is popular in DIY electronics due to its versatility and availability, making it suitable for hobbyists and professionals alike. Its reliable performance in handling higher voltages and currents makes it a staple in various power applications.

Equivalent

The IRF830 is an N-channel MOSFET commonly used in switching applications. Equivalent products include:
1. IRF530 - Similar voltage rating but lower current capacity.
2. IRF540 - Higher current capacity, similar voltage rating.
3. IRF840 - Higher voltage rating but similar current capacity.
4. STP10NK60Z - From STMicroelectronics, similar specifications.
5. 2N60 - Typically higher voltage rating with comparable performance.
Always verify specifications from datasheets to ensure compatibility with your application.

Features

The IRF830 is an N-channel MOSFET that is commonly used in electronic circuits for switching and amplification purposes. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 4.5A, which allows it to handle moderate current loads.
3. R_DS(on): The on-resistance is relatively low, typically around 1.5 ohms, which ensures efficient current flow with minimal power loss when the MOSFET is in the on state.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) range of 2.0V to 4.0V, ensuring that it can be driven by common logic levels for switching applications.
5. Package Type: The IRF830 is typically available in a TO-220 package, which provides good thermal performance and easy mounting to heat sinks.
6. Applications: It is widely used in power supplies, motor controllers, and various other applications requiring efficient high-speed switching.
These features make the IRF830 a versatile component in both consumer and industrial electronics.

Pinout

The IRF830 is an N-channel MOSFET commonly used for high-speed switching applications. It typically comes in a TO-220 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin is responsible for turning the MOSFET on or off. A voltage applied here controls the flow of current between the drain and source.
2. Drain (D): This pin is the output of the MOSFET where the load is connected. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This is the ground or reference point for the MOSFET and is connected to the source of electrons.
The IRF830 is popular for its ability to handle relatively high voltages and currents, with a maximum drain-source voltage of 500V and a continuous drain current of up to 4.5A. It is widely used in power supply, motor control, and amplification applications due to its efficient switching characteristics.

Manufacturer

The IRF830 is a type of power MOSFET, and it was originally manufactured by International Rectifier (IR). International Rectifier was a company specializing in power management technology and semiconductor products. It was well-known for designing and manufacturing power semiconductors, including MOSFETs, IGBTs, and other types of power transistors, as well as integrated circuits and power systems.
In 2015, International Rectifier was acquired by Infineon Technologies, a global semiconductor manufacturer based in Germany. Infineon is known for producing a broad range of semiconductor solutions, including those for automotive, industrial power control, power management, and digital security applications. As a result of this acquisition, Infineon Technologies now encompasses the portfolio of International Rectifier, including products like the IRF830. Infineon continues to be a leading player in the semiconductor industry, particularly in the field of power electronics.

Application

The IRF830 is an N-channel MOSFET used in various applications due to its capability to handle high voltage and current. It is commonly used in:
1. Switching Power Supplies: Efficiently manages electrical energy in power conversion systems.
2. Motor Control: Drives DC motors in industrial and automotive applications.
3. Inverters: Converts DC to AC power in renewable energy systems.
4. Relay Replacement: Acts as a solid-state relay in electronic circuits.
5. Lighting Systems: Controls high voltage lighting loads, including LED systems.
6. Audio Amplifiers: Used in Class D audio amplifiers for efficient audio signal amplification.
These applications leverage the IRF830's fast switching speed and high efficiency.

Package

The IRF830 is typically available in a TO-220 package. This package type is commonly used for power transistors and features three leads with a metal tab for mounting and heat dissipation.

Produkte, die mit IRF830 zusammenhängen