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IRF840APBF
+StücklisteMOSFET N-CH 500V 8A TO220AB
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HerstellerVishay Siliconix
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Herstellerteil #IRF840APBF
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Datenblatt IRF840APBF DataSheet
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Paket TO-220-3
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Auf Lager5165
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 8A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 850mOhm @ 4.8A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1018 pF @ 25 V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Übersicht
Description
Key features include a voltage rating of 500V and a continuous current rating of 8A, making it suitable for moderate power levels. The IRF840APBF also has a low gate charge, which ensures fast switching speeds and improves overall efficiency. The TO-220 package provides a convenient form factor for heat dissipation and integration into electronic circuits.
This MOSFET is built with rugged construction, capable of withstanding challenging environments, and offers reliable performance in various industrial applications. The lead-free "PBF" designation indicates compliance with RoHS standards. Overall, the IRF840APBF is valued for its balance of performance, durability, and cost-effectiveness in power conversion and management solutions.
Equivalent
1. IRF840 - from various manufacturers
2. NTE2388 - from NTE Electronics
3. STP12NK50Z - from STMicroelectronics
4. FDPF7N50U - from ON Semiconductor
5. FQA12N50C - from Fairchild Semiconductor
These alternatives may have differences in specifications, so always compare datasheets to ensure suitability for your application.
Features
1. N-channel MOSFET: This configuration facilitates easier control in switching applications.
2. VDSS of 500V: Ensures the device can handle high voltage applications effectively.
3. RDS(on) of 0.85 Ohm: Indicates low on-state resistance, which minimizes power loss and improves efficiency.
4. ID of 8A: Maximum continuous drain current, suitable for moderate power applications.
5. Fast Switching Speed: Enhances performance in high-frequency applications.
6. TO-220AB Package: Provides excellent thermal performance and ease of mounting.
7. Temperature Range: Operates effectively across a broad temperature range, making it versatile for various environments.
8. Avalanche Rated: Offers robustness against high-energy pulse conditions.
9. RoHS Compliant: Environmentally friendly, free of hazardous substances.
These features make the IRF840APBF suitable for use in power supplies, motor drives, and general-purpose switching.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate regulates the current flow between the drain and source.
2. Drain (D): Current flows out of the drain when the MOSFET is on. It is the terminal where the load is connected.
3. Source (S): This is the terminal through which current leaves the device. It is commonly connected to the ground in many applications.
The IRF840APBF is designed for high-speed switching applications and can handle a maximum drain-source voltage of 500V and continuous drain current of up to 8A. It is widely used in power supply, motor control, and electronic ballasts.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Motor Control: Drives motors in industrial and automotive systems.
3. DC-DC Converters: Used in step-up or step-down converters for voltage regulation.
4. Inverters: Employed in inverter circuits for converting DC to AC power.
5. Lighting: Used in high-intensity discharge (HID) and LED lighting systems.
6. Audio Amplifiers: Functions in the output stage of audio amplifiers for high power handling.
Its robustness and efficiency make it ideal for applications requiring high power and reliability.