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MOSFET 2N-CH 20V 10A 8-SOIC
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HerstellerInfineon-Technologien
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Herstellerteil #IRF9910TR
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Paket SOIC-8
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Auf Lager8716
365 Tage Qualitätsgarantie
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Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR) |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 10A, 12A |
| Rds On(Max) @ Id Vgs | 13.4mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.55V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 900pF @ 10V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |