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IRFB3306PBF
+StücklisteMOSFET N-CH 60V 120A TO220AB
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HerstellerInfineon-Technologien
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Herstellerteil #IRFB3306PBF
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Datenblatt IRFB3306PBF DataSheet
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Paket TO-220-3
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Auf Lager3253
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Spezifikationen
| Attribut | Wert |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.2mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 120 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4520 pF @ 50 V |
| PowerDissipation(Max) | 230W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
- Voltage Rating: 60V
- Current Rating: 195A (pulsed) / 120A (continuous)
- Low On-Resistance (RDS(on)): 1.8mΩ (max at 10V VGS)
- Fast Switching: Suitable for high-efficiency power conversion
- Package: TO-220AB (through-hole)
Common applications include motor drives, DC-DC converters, and power supplies, where low conduction losses and high current handling are critical. Its robust design ensures reliability in demanding environments.
For detailed specs, refer to the datasheet.
Equivalent
- IRFB3307PBF (similar specs, slightly higher Rds(on))
- IRFB4310PBF (higher voltage, 100V)
- AUIRFB3306 (same specs, automotive-grade)
- STP160N6F7 (STMicroelectronics alternative)
- IPP060N06N (Infineon alternative)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 60V
- Current Rating: 195A (pulsed) / 120A (continuous)
- Low On-Resistance (RDS(on)): 3.3 mΩ (max) @ VGS = 10V
- Fast Switching: Low gate charge (Qgs = 60nC, Qgd = 110nC)
- High Power Handling: Suitable for high-current applications
- Avalanche Energy Rated: Robust against inductive spikes
- Package: TO-220AB (through-hole)
- Applications: Motor drives, power supplies, inverters, and DC-DC converters
Designed for efficiency in high-power switching, it offers low conduction losses and fast switching performance.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- 60V drain-source voltage (VDS)
- 120A continuous drain current (ID)
- Low on-resistance (RDS(on) = 1.8mΩ max at 10V VGS)
- Used in high-power switching (motor drives, power supplies, inverters).
*Package:* TO-220AB (through-hole, tab is electrically connected to the drain).
Application
1. Switching Power Supplies – Efficient power conversion in AC/DC and DC/DC applications.
2. Motor Control – Drives motors in industrial, automotive, and robotics systems.
3. Solar Inverters – Converts DC from solar panels to AC with minimal losses.
4. Battery Management – Used in charging/discharging circuits for energy storage.
5. LED Lighting – Enables high-efficiency LED drivers.
Its low on-resistance and high current handling make it ideal for high-power, high-frequency switching applications.
