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IRFB4310PBF
+StücklisteIRFB4310 - 12V-300V N-CHANNEL PO
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HerstellerInternationaler Gleichrichter
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Herstellerteil #IRFB4310PBF
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Datenblatt IRFB4310PBF DataSheet
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Paket TO-220-3
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Auf Lager4639
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Spezifikationen
| Attribut | Wert |
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7670 pF @ 50 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
Key specifications include a low R_DS(on) of 4.5 mΩ (typical) at 10V gate voltage, which reduces power loss and improves efficiency in power conversion applications. The device is housed in a TO-220 package, which offers good thermal performance and ease of mounting on heat sinks.
The IRFB4310PBF is often used in applications like motor drives, DC-DC converters, and power supplies, where high power density and reliability are essential. Additionally, it complies with lead-free and RoHS standards, making it appropriate for environmentally sensitive designs. Its robust construction enables it to withstand high energy pulses in the avalanche and commutation modes, making it a reliable choice for various industrial and commercial applications.
Equivalent
1. STP55NF06 from STMicroelectronics
2. FQP50N06 from ON Semiconductor
3. FDP8870 from Fairchild Semiconductor (now part of ON Semiconductor)
It's important to check the datasheets for exact matching specifications to confirm compatibility in specific applications.
Features
1. Voltage Rating: It has a drain-to-source voltage (V_ds) rating of 100V.
2. Current Capacity: This MOSFET can handle a continuous drain current (I_d) of up to 130A at 25°C.
3. R_ds(on): The device offers a low on-resistance of approximately 4.5 mΩ, minimizing power loss.
4. Package: It comes in a TO-220 package, suitable for through-hole mounting.
5. Thermal Performance: It provides efficient heat dissipation, aided by its package and low on-resistance.
6. Safe Operating Area (SOA): This device is robust with a good SOA, making it reliable for various demanding applications.
7. Applications: Ideal for use in power management, motor drives, and DC-DC converters.
Overall, the IRFB4310PBF is designed to deliver high performance with low losses, making it suitable for power-intensive applications.
Pinout
1. Gate (G): Used to control the flow of current between the drain and source. Applying voltage to the gate allows current flow.
2. Drain (D): The terminal through which the current flows out of the MOSFET; it connects to the load in a circuit.
3. Source (S): The terminal through which the current enters the MOSFET; connects to the ground or return path in a circuit.
The IRFB4310PBF is known for its low on-state resistance and can handle high current loads, making it suitable for power-intensive applications.
Manufacturer
Application
1. Power Supply Units: Used in switching power supplies for improved efficiency.
2. Motor Drives: Suitable for use in motor control circuits for industrial and automotive applications.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
4. Battery Management Systems: Plays a role in battery protection and charging circuits.
5. DC-DC Converters: Employed in the conversion of voltage levels in electronic devices.
6. Lighting: Used in LED drivers and electronic ballast for energy efficiency.
These applications benefit from its robust performance and thermal efficiency.