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IRFBG30PBF
+StücklisteMOSFET N-CH 1000V 3.1A TO220AB
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HerstellerVishay Siliconix
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Herstellerteil #IRFBG30PBF
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Paket TO-220-3
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Auf Lager2931
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Spezifikationen
| Attribut | Wert |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 3.1A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 5Ohm @ 1.9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 980 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
The IRFBG30PBF is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) known for its robustness and efficiency. Manufactured by Infineon Technologies, it is designed to handle high power and high-speed switching applications. The MOSFET features a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 82A, making it suitable for applications like power supply circuits, motor controllers, and other electronic devices requiring efficient power management.
Key characteristics of the IRFBG30PBF include low on-state resistance, which minimizes power loss and heat generation, and a fast switching speed, enhancing performance in dynamic environments. The device is typically housed in a TO-220 or similar package, providing durable encapsulation suitable for various thermal management solutions. Additionally, it has a lead-free, RoHS-compliant design, aligning with modern environmental standards. Overall, the IRFBG30PBF is favored for its reliability, efficiency, and versatility in managing high-power electronic applications.
Key characteristics of the IRFBG30PBF include low on-state resistance, which minimizes power loss and heat generation, and a fast switching speed, enhancing performance in dynamic environments. The device is typically housed in a TO-220 or similar package, providing durable encapsulation suitable for various thermal management solutions. Additionally, it has a lead-free, RoHS-compliant design, aligning with modern environmental standards. Overall, the IRFBG30PBF is favored for its reliability, efficiency, and versatility in managing high-power electronic applications.
Equivalent
Equivalent products to the IRFBG30PBF chip, which is a HEXFET Power MOSFET, include:
1. STMicroelectronics' STP55NF06
2. ON Semiconductor's FDP8440
3. Vishay's SiHF530
4. NXP's BUK9535-55A
Ensure compatibility by checking specific electrical characteristics and pin configurations before substitution.
1. STMicroelectronics' STP55NF06
2. ON Semiconductor's FDP8440
3. Vishay's SiHF530
4. NXP's BUK9535-55A
Ensure compatibility by checking specific electrical characteristics and pin configurations before substitution.
Features
The IRFBG30PBF is a power MOSFET designed for high-efficiency performance in electronic applications. Key features include:
1. Type: N-channel MOSFET.
2. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 150V.
3. Current Rating: The continuous drain current (I_D) is approximately 33A at 25°C.
4. R_DS(on): The on-resistance is typically low, around 0.045 ohms, enhancing efficiency.
5. Package: Comes in a TO-220 package, which is common for power devices, offering good thermal performance.
6. Technology: Utilizes advanced silicon technology for improved power dissipation and reliability.
7. Temperature: Operates efficiently across a wide temperature range, typically up to 175°C junction temperature.
8. Applications: Suitable for use in switching applications, such as power supply circuits, motor drivers, and DC-DC converters.
These features make the IRFBG30PBF an effective component for high-power, high-efficiency applications, providing reliability and performance in demanding environments.
1. Type: N-channel MOSFET.
2. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 150V.
3. Current Rating: The continuous drain current (I_D) is approximately 33A at 25°C.
4. R_DS(on): The on-resistance is typically low, around 0.045 ohms, enhancing efficiency.
5. Package: Comes in a TO-220 package, which is common for power devices, offering good thermal performance.
6. Technology: Utilizes advanced silicon technology for improved power dissipation and reliability.
7. Temperature: Operates efficiently across a wide temperature range, typically up to 175°C junction temperature.
8. Applications: Suitable for use in switching applications, such as power supply circuits, motor drivers, and DC-DC converters.
These features make the IRFBG30PBF an effective component for high-power, high-efficiency applications, providing reliability and performance in demanding environments.
Pinout
The IRFBG30PBF is a power MOSFET from Infineon Technologies, formerly produced by International Rectifier. It is primarily used for switching applications. This device comes in a TO-220 package and has three pins:
1. Gate (G): This terminal receives the input signal that controls the MOSFET's switching operation.
2. Drain (D): This is the terminal where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This is the terminal where the current exits the MOSFET.
The IRFBG30PBF is designed to handle high power, with specifications including a high voltage and current rating. It's commonly used in applications such as power supplies, motor controllers, and other high-speed switching circuits.
1. Gate (G): This terminal receives the input signal that controls the MOSFET's switching operation.
2. Drain (D): This is the terminal where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This is the terminal where the current exits the MOSFET.
The IRFBG30PBF is designed to handle high power, with specifications including a high voltage and current rating. It's commonly used in applications such as power supplies, motor controllers, and other high-speed switching circuits.
Manufacturer
The IRFBG30PBF is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that specializes in a wide range of product areas, including power semiconductors, microcontrollers, security controllers, and sensors. The company focuses on providing solutions for automotive, industrial, and consumer electronics applications with an emphasis on energy efficiency, mobility, and security. Infineon aims to enable sustainable development and technological advancement through its innovative semiconductor products.
Application
The IRFBG30PBF is a power MOSFET used in various applications requiring efficient switching and amplification. Common application areas include:
1. Power Supplies: Used in SMPS and DC-DC converters for efficient energy conversion.
2. Motor Control: Employed in motor drive circuits for industrial and consumer electronics.
3. Inverters: Utilized in solar inverters and other renewable energy systems.
4. Audio Amplifiers: Acts as a switch or amplifier in high-power audio systems.
5. Battery Management: Used in battery chargers and management systems for efficient power handling.
6. Automotive Electronics: Applied in automotive systems for controlling various loads.
These applications benefit from the IRFBG30PBF's low on-resistance and high-speed switching capabilities.
1. Power Supplies: Used in SMPS and DC-DC converters for efficient energy conversion.
2. Motor Control: Employed in motor drive circuits for industrial and consumer electronics.
3. Inverters: Utilized in solar inverters and other renewable energy systems.
4. Audio Amplifiers: Acts as a switch or amplifier in high-power audio systems.
5. Battery Management: Used in battery chargers and management systems for efficient power handling.
6. Automotive Electronics: Applied in automotive systems for controlling various loads.
These applications benefit from the IRFBG30PBF's low on-resistance and high-speed switching capabilities.
Package
The IRFBG30PBF is a power MOSFET from Infineon Technologies, packaged in a TO-220 Full-Pak. This package type is designed for through-hole mounting and provides efficient heat dissipation, suitable for various power applications.
