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IRFH5015TRPBF
+StücklisteMOSFET N-CH 150V 10A/56A 8PQFN
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HerstellerInfineon-Technologien
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Herstellerteil #IRFH5015TRPBF
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Datenblatt IRFH5015TRPBF DataSheet
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Auf Lager4905
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Spezifikationen
| Attribut | Wert |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 34A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 50 V |
| Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | IRFH5015 |
Übersicht
Description
IRFH5015TRPBF is a specialized component typically used in power management applications, particularly in automotive or industrial systems. It is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching and low on-resistance, making it suitable for regulating voltage and controlling power delivery in electronic circuits.
The device features advanced thermal and electrical performance, which enhances reliability and efficiency in power conversion tasks. Its compact design allows for integration into space-constrained applications, while its robust construction ensures durability under varying environmental conditions.
Common applications include DC-DC converters, battery management systems, and motor control circuits, where precise control over power flow is critical. Overall, IRFH5015TRPBF is valued for its performance in enhancing energy efficiency and enabling reliable operation in demanding applications.
The device features advanced thermal and electrical performance, which enhances reliability and efficiency in power conversion tasks. Its compact design allows for integration into space-constrained applications, while its robust construction ensures durability under varying environmental conditions.
Common applications include DC-DC converters, battery management systems, and motor control circuits, where precise control over power flow is critical. Overall, IRFH5015TRPBF is valued for its performance in enhancing energy efficiency and enabling reliable operation in demanding applications.
Equivalent
The IRFH5015TRPBF is a N-channel MOSFET. Equivalent products include devices such as the STP75NF75, AOD6N60, and BSS138. When looking for alternatives, ensure similar specifications, including R_DS(on), voltage rating, and current rating, to match your application's requirements. Always verify compatibility with the specific circuit design before substitution.
Features
The IRFH5015TRPBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain currents (I_D) of up to 50A, enhancing its usability in demanding circuits.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of about 10 milliohms, which minimizes power loss and improves efficiency.
4. Fast Switching: The MOSFET offers high-speed switching capabilities, ideal for applications like power supplies and motor control.
5. Thermal Performance: It comes in a TO-220 package, facilitating effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy integration with various driving circuits.
These features make the IRFH5015TRPBF suitable for a wide range of applications in power electronics and automotive systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain currents (I_D) of up to 50A, enhancing its usability in demanding circuits.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of about 10 milliohms, which minimizes power loss and improves efficiency.
4. Fast Switching: The MOSFET offers high-speed switching capabilities, ideal for applications like power supplies and motor control.
5. Thermal Performance: It comes in a TO-220 package, facilitating effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy integration with various driving circuits.
These features make the IRFH5015TRPBF suitable for a wide range of applications in power electronics and automotive systems.
Pinout
The IRFH5015TRPBF is an N-channel MOSFET with a total of 8 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where current flows out when the device is on.
3. Source (S) - The terminal where current enters when the device is conducting.
4. Tab - Internally connected to the drain; often used for heat sinking.
The MOSFET is designed for high current and voltage applications, featuring low on-resistance and fast switching capabilities, making it suitable for power management, DC-DC converters, and motor control applications. The "TRPBF" suffix indicates that it is RoHS compliant and is packaged in a surface-mount SO-8 package.
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where current flows out when the device is on.
3. Source (S) - The terminal where current enters when the device is conducting.
4. Tab - Internally connected to the drain; often used for heat sinking.
The MOSFET is designed for high current and voltage applications, featuring low on-resistance and fast switching capabilities, making it suitable for power management, DC-DC converters, and motor control applications. The "TRPBF" suffix indicates that it is RoHS compliant and is packaged in a surface-mount SO-8 package.
Manufacturer
The IRFH5015TRPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in the production of semiconductor solutions for various applications, including automotive, industrial power control, and consumer electronics. The company is known for its expertise in power management, sensor technologies, and security ICs. Infineon focuses on providing innovative products that enhance energy efficiency and support emerging technologies such as electric vehicles and renewable energy systems. Founded in 1999, Infineon has a global presence and is recognized as a key player in the semiconductor industry.
Application
The IRFH5015TRPBF is a high-performance N-channel MOSFET primarily used in power management applications. Key application areas include:
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Switching Power Supplies: Enhancing efficiency and thermal management.
3. Motor Control: Used in driving applications for electric motors.
4. LED Drivers: In facilitating efficient power delivery to LED lighting systems.
5. Battery Management Systems: For efficient switching in charging circuits.
6. Audio Amplifiers: In class D amplifier implementations for improved power efficiency.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Switching Power Supplies: Enhancing efficiency and thermal management.
3. Motor Control: Used in driving applications for electric motors.
4. LED Drivers: In facilitating efficient power delivery to LED lighting systems.
5. Battery Management Systems: For efficient switching in charging circuits.
6. Audio Amplifiers: In class D amplifier implementations for improved power efficiency.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
Package
The IRFH5015TRPBF is typically packaged in a TO-220 form factor, which is a thermally efficient package used for power transistors.
