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IRFH8330TRPBF
+StücklisteMOSFET N-CH 30V 17A/56A PQFN
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HerstellerInfineon-Technologien
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Herstellerteil #IRFH8330TRPBF
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Datenblatt IRFH8330TRPBF DataSheet
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Auf Lager4394
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Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 17A (Ta), 56A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6.6mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1450 pF @ 25 V |
| Power Dissipation (Max) | 3.3W (Ta), 35W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (5x6) |
Übersicht
Description
The IRFH8330TRPBF is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for use in high-efficiency electronic applications, particularly in power management and motor control systems. This component is part of the HEXFET® power MOSFET series, known for their low on-resistance and high-speed switching capabilities.
Key features of the IRFH8330TRPBF include a maximum drain-to-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to approximately 150A, depending on operating conditions. The MOSFET is housed in a Power56 package, which is optimized for superior thermal performance and compact design, making it suitable for high-density circuit layouts.
This MOSFET is commonly used in DC-DC converters, synchronous rectification, and other applications requiring efficient power switching. It is also known for its robustness, with features like avalanche ruggedness and a wide safe operating area, making it reliable under demanding conditions.
Key features of the IRFH8330TRPBF include a maximum drain-to-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to approximately 150A, depending on operating conditions. The MOSFET is housed in a Power56 package, which is optimized for superior thermal performance and compact design, making it suitable for high-density circuit layouts.
This MOSFET is commonly used in DC-DC converters, synchronous rectification, and other applications requiring efficient power switching. It is also known for its robustness, with features like avalanche ruggedness and a wide safe operating area, making it reliable under demanding conditions.
Equivalent
The IRFH8330TRPBF is a power MOSFET manufactured by Infineon Technologies. Its equivalents include:
1. NTMFS5C628NL by ON Semiconductor
2. BSC059N04LS6 by Infineon Technologies
3. CSD18514Q5A by Texas Instruments
4. SiRA14DP by Vishay Siliconix
These alternatives are similar based on voltage, current ratings, and package type. However, always ensure the specific application requirements are met when selecting a replacement.
1. NTMFS5C628NL by ON Semiconductor
2. BSC059N04LS6 by Infineon Technologies
3. CSD18514Q5A by Texas Instruments
4. SiRA14DP by Vishay Siliconix
These alternatives are similar based on voltage, current ratings, and package type. However, always ensure the specific application requirements are met when selecting a replacement.
Features
The IRFH8330TRPBF is a Power MOSFET designed by Infineon Technologies. Key features include:
1. N-Channel MOSFET: Suitable for high-side switching applications.
2. Voltage and Current Ratings: Rated for 30V drain-to-source voltage (V_DS) and continuous current (I_D) up to 100A.
3. Low On-Resistance: Features low R_DS(on) to minimize conduction losses, improving efficiency.
4. Fast Switching: Enables high-frequency operation, suitable for power conversion and motor control applications.
5. Package: Available in a compact, surface-mount DirectFET package which provides better thermal performance and power density.
6. Thermal Performance: Designed for improved heat dissipation, allowing higher current handling in compact designs.
7. Applications: Ideal for DC-DC converters, load switches, synchronous rectification, and other power management systems.
These features make the IRFH8330TRPBF a versatile and efficient choice for various high-power electronic applications.
1. N-Channel MOSFET: Suitable for high-side switching applications.
2. Voltage and Current Ratings: Rated for 30V drain-to-source voltage (V_DS) and continuous current (I_D) up to 100A.
3. Low On-Resistance: Features low R_DS(on) to minimize conduction losses, improving efficiency.
4. Fast Switching: Enables high-frequency operation, suitable for power conversion and motor control applications.
5. Package: Available in a compact, surface-mount DirectFET package which provides better thermal performance and power density.
6. Thermal Performance: Designed for improved heat dissipation, allowing higher current handling in compact designs.
7. Applications: Ideal for DC-DC converters, load switches, synchronous rectification, and other power management systems.
These features make the IRFH8330TRPBF a versatile and efficient choice for various high-power electronic applications.
Pinout
The IRFH8330TRPBF is a power MOSFET designed for efficient power management applications. It comes in a PQFN (Power Quad Flat No-Lead) package with a pin count of 5. The primary function of this MOSFET is to act as a switch or amplifier in power circuits, offering low on-resistance and high switching speed, which is ideal for applications requiring efficient energy conversion and management. Its key specifications include a low RDS(on) for reduced conduction losses and a high current capacity suitable for high-power applications. The compact package size of the IRFH8330TRPBF allows for efficient thermal management and space-saving on circuit boards.
Manufacturer
The manufacturer of the IRFH8330TRPBF is Infineon Technologies. Infineon is a global semiconductor company that specializes in producing a wide range of electronic components, including power semiconductors, microcontrollers, security controllers, and sensors. Known for their innovation and reliability, Infineon's products are used in various applications across different industries, such as automotive, industrial, consumer electronics, and communication technologies. The company is headquartered in Neubiberg, Germany, and is recognized for its focus on energy efficiency, mobility, and security in electronic systems.
Application
The IRFH8330TRPBF is a power MOSFET used in various applications due to its high efficiency and compact size. Key application areas include:
1. DC-DC Converters: Utilized in power management systems for converting voltage levels efficiently.
2. Motor Control: Applied in controlling motors, especially in automotive and industrial applications.
3. Power Management: Suitable for use in power supply circuits for telecommunications and computing.
4. Battery Protection: Used in battery management systems to ensure safe charging and discharging.
5. Load Switching: Ideal for switching applications in consumer electronics and industrial equipment.
Its low RDS(on) and fast switching capabilities make it suitable for high-performance power applications.
1. DC-DC Converters: Utilized in power management systems for converting voltage levels efficiently.
2. Motor Control: Applied in controlling motors, especially in automotive and industrial applications.
3. Power Management: Suitable for use in power supply circuits for telecommunications and computing.
4. Battery Protection: Used in battery management systems to ensure safe charging and discharging.
5. Load Switching: Ideal for switching applications in consumer electronics and industrial equipment.
Its low RDS(on) and fast switching capabilities make it suitable for high-performance power applications.
Package
The IRFH8330TRPBF is a power MOSFET packaged in a PQFN (Power Quad Flat No-lead) type, specifically designed for surface mounting. This package type offers improved thermal performance and efficient space utilization for electronic circuits, making it suitable for high-density applications.
