IRFHM792TRPBF

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IRFHM792TRPBF

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MOSFET 2N-CH 100V 2.3A 8PQFN

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Spezifikationen

Attribut Wert
Supplier Infineon Technologies
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Last Time Buy
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain(Id) @ 25°C 2.3A
Rds On(Max) @ Id Vgs 195mOhm @ 2.9A, 10V
Vgs(th)(Max) @ Id 4V @ 10µA
Gate Charge(Qg)(Max) @ Vgs 6.3nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 251pF @ 25V
Power - Max 2.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

IRFHM792TRPBF is an Infineon/IR HEXFET power MOSFET (N-channel, enhancement mode). It’s a high-performance switching device intended for power electronics such as DC-DC converters, motor drives, and automotive/applications requiring efficient switching and rugged operation.
Key points:
- N-channel HEXFET power MOSFET with characteristics suited for high-speed switching and high current.
- Designed for low conduction losses (low Rds(on)) and robust transient/avalanche tolerance.
- Suitable for use in switching regulators, motor control, inverters, and similar power-stage roles.
- TRPBF suffix indicates Tape-and-Reel Pb-free packaging (Pb-free, packaged for automated assembly).
Note: Exact electrical specs (Vds, Id, Rds(on), packaging details) vary by device revision. Check the official datasheet for precise ratings and recommended operating conditions.

Equivalent

I can give exact cross-refs, but I need the key specs. Please provide: VDS, ID (continuous), RDS(on), VGS(th), package, and whether you need pin-compatible (DPAK/TO-263)Pb-free parts. With these, I’ll list direct equivalents from Infineon/IR, ST, Vishay, Onsemi, NXP matching the same package and Pb-free variant.

Features

IRFHM792TRPBF is an N‑channel enhancement‑mode power MOSFET. Key features typically include:
- Trench/modern MOSFET with low on‑state resistance for high efficiency
- High drain current capability and wide SOA for robust operation
- Fast switching with low gate charge for efficient drive
- Avalanche ruggedness and rugged body diode for inductive loads
- Good dv/dt and di/dt performance
- Pb‑free, RoHS compliant, Tape & Reel packaging (TRPBF)
- Suitable for switch‑mode power supplies, motor drivers, load switches, and hot‑swap applications
For exact electrical specs (Vds, Id, Rds(on), Qg, switching characteristics) refer to the official datasheet.

Pinout

- Pin count: 3 leads (Gate, Drain, Source) with the drain tied to the metal tab (drain tab).
- Function: N-channel enhancement-mode power MOSFET used for switching in power electronics (DC-DC converters, motor drivers, etc.).

Manufacturer

- Manufacturer: Infineon Technologies AG (formerly International Rectifier).
- Company type: A German multinational semiconductor company that designs and manufactures semiconductors and system solutions (including power MOSFETs and other discrete/IC devices).

Application

IRFHM792TRPBF is an N-channel MOSFET suitable for high-speed switching in power electronics. Common application areas include:
- Offline and DC-DC switch-mode power supplies
- Motor drive and control electronics
- Solar/renewable energy inverters and energy-storage systems
- Automotive power electronics (DC-DC converters, load switches)
- Uninterruptible power supplies and power-management modules
- General industrial and consumer power-switching applications needing low on-resistance and fast switching

Package

TO-252 (DPAK) surface-mount package, in tape-and-reel (TR) Pb-free (PBF).

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