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IRFP260NPBF
+StücklisteMOSFET N-CH 200V 50A TO247AC
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HerstellerInfineon-Technologien
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Herstellerteil #IRFP260NPBF
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Datenblatt IRFP260NPBF DataSheet
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Paket TO-247
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Auf Lager4174
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Spezifikationen
| Attribut | Wert |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 50A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 40mOhm @ 28A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 234 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4057 pF @ 25 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
Übersicht
Description
Key features of the IRFP260NPBF include a maximum drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) of 50A at 25°C, and a low on-resistance (R_DS(on)) of 0.04 ohms, resulting in efficient operation with minimal power loss. The MOSFET is housed in a TO-247 package, which provides good thermal performance and is suitable for efficient heat dissipation when mounted on heatsinks.
The IRFP260NPBF is RoHS compliant, ensuring it meets environmental standards for hazardous substances. Its robust design and efficient performance make it a popular choice for high-power electronics and industrial applications.
Equivalent
Features
1. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 50A, making it suitable for high-power applications.
2. R_DS(on): It offers a low on-state resistance, approximately 0.04 ohms, reducing power loss and improving efficiency.
3. Package: Available in a TO-247AC package, which provides effective heat dissipation, essential for handling high power levels.
4. Temperature Range: It operates efficiently within a wide temperature range, enhancing reliability in various environments.
5. Gate Charge: Features a moderate total gate charge, facilitating rapid switching and enhancing performance in fast-switching applications.
6. Applications: Commonly used in power supplies, motor drives, and other applications requiring high-speed switching and high efficiency.
These attributes make the IRFP260NPBF suitable for robust, high-efficiency power control solutions.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate changes the conductivity between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows out of the transistor. It is connected to the load in most applications.
3. Source (S): This pin is the terminal through which the main current enters the MOSFET. It is usually connected to the ground or the negative side of the circuit.
The IRFP260NPBF is an N-channel MOSFET, meaning it is turned on by applying a positive voltage to the gate relative to the source. It is widely used in high-power applications due to its high current and voltage ratings.
Manufacturer
Application
1. Switching Power Supplies: Utilized in converters and inverters due to its efficiency.
2. Motor Drives: Ideal for controlling DC motor speeds in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Ensures reliability in power backup systems.
4. Solar Inverters: Converts DC from solar panels to AC for grid compatibility.
5. Audio Amplifiers: Provides efficient power handling for high-fidelity sound systems.
6. Induction Heating: Used in circuits that demand rapid switching capability.
These applications benefit from the MOSFET’s low on-state resistance and fast switching performance.