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IRFR24N15DTRPBF
+StücklisteMOSFET N-CH 150V 24A DPAK
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HerstellerInfineon-Technologien
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Herstellerteil #IRFR24N15DTRPBF
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Auf Lager4070
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Spezifikationen
| Attribut | Wert |
| Series | HEXFET® |
| Part Status | Active |
| Base Product Number | IRFR24 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA (DPAK) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
The IRFR24N15DTRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It features a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) of 24A, making it suitable for various applications in power management, motor control, and DC-DC converters.
The MOSFET has a low on-resistance (Rds(on)) which ensures reduced power losses during operation, enhancing efficiency. It typically comes in a TO-220 package, facilitating effective heat dissipation.
Key specifications include a fast switching speed, allowing for efficient performance in high-frequency applications. The IRFR24N15DTRPBF is also RoHS compliant, reflecting its suitability for environmentally conscious designs.
Overall, this component is ideal for engineers seeking reliable and efficient semiconductor solutions for their power electronic designs.
The MOSFET has a low on-resistance (Rds(on)) which ensures reduced power losses during operation, enhancing efficiency. It typically comes in a TO-220 package, facilitating effective heat dissipation.
Key specifications include a fast switching speed, allowing for efficient performance in high-frequency applications. The IRFR24N15DTRPBF is also RoHS compliant, reflecting its suitability for environmentally conscious designs.
Overall, this component is ideal for engineers seeking reliable and efficient semiconductor solutions for their power electronic designs.
Equivalent
The IRFR24N15DTRPBF is an N-channel MOSFET. Equivalent products include:
1. STP24NM50N
2. FQP24N15
3. BSS123
4. IRF240
5. AUIRF24N15
Always verify specifications like voltage, current ratings, and package type before substituting to ensure compatibility.
1. STP24NM50N
2. FQP24N15
3. BSS123
4. IRF240
5. AUIRF24N15
Always verify specifications like voltage, current ratings, and package type before substituting to ensure compatibility.
Features
The IRFR24N15DTRPBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 150V maximum drain-source voltage (V_DS), suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 24A, allowing for robust performance in power circuits.
3. R_DS(on): Low on-resistance of approximately 0.2 ohms at V_GS = 10V, ensuring reduced conduction losses and improved efficiency.
4. Gate-Source Voltage (V_GS): Max rating of ±20V, which provides flexibility in driving the gate.
5. Fast Switching: Capable of fast switching speeds, making it ideal for applications such as motor control and power inverters.
6. Package Type: Available in a TO-220 package, facilitating effective thermal dissipation and ease of integration into various designs.
7. RoHS Compliant: Free from hazardous substances, meeting environmental standards.
These attributes make the IRFR24N15DTRPBF suitable for various power management and switching applications.
1. Voltage Rating: 150V maximum drain-source voltage (V_DS), suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 24A, allowing for robust performance in power circuits.
3. R_DS(on): Low on-resistance of approximately 0.2 ohms at V_GS = 10V, ensuring reduced conduction losses and improved efficiency.
4. Gate-Source Voltage (V_GS): Max rating of ±20V, which provides flexibility in driving the gate.
5. Fast Switching: Capable of fast switching speeds, making it ideal for applications such as motor control and power inverters.
6. Package Type: Available in a TO-220 package, facilitating effective thermal dissipation and ease of integration into various designs.
7. RoHS Compliant: Free from hazardous substances, meeting environmental standards.
These attributes make the IRFR24N15DTRPBF suitable for various power management and switching applications.
Pinout
The IRFR24N15DTRPBF is an N-channel MOSFET from Infineon Technologies with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the output terminal where current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is the input terminal where current enters the MOSFET. It is typically connected to ground in low-side switching applications.
4. Tab (not a pin): The tab on the package may be connected to the drain internally, and it is used for heat dissipation.
The IRFR24N15DTRPBF is commonly used in power management, switching applications, and motor control due to its high efficiency and fast switching capabilities.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the output terminal where current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is the input terminal where current enters the MOSFET. It is typically connected to ground in low-side switching applications.
4. Tab (not a pin): The tab on the package may be connected to the drain internally, and it is used for heat dissipation.
The IRFR24N15DTRPBF is commonly used in power management, switching applications, and motor control due to its high efficiency and fast switching capabilities.
Manufacturer
The IRFR24N15DTRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Germany. The company specializes in designing and manufacturing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and automotive solutions. Infineon focuses on innovative technologies that enable efficient energy management, secure communications, and mobility solutions. Its products are widely used in automotive, industrial, and consumer electronics applications, making it a key player in the semiconductor industry. The IRFR24N15DTRPBF is a N-channel MOSFET, commonly used in power management and switching applications, reflecting Infineon’s expertise in power semiconductor technology.
Application
The IRFR24N15DTRPBF is an N-channel MOSFET primarily used in power management applications. Its key areas include:
1. Power Supplies: Switching regulators and converters for efficient power management.
2. Motor Control: Used in DC motor drives and controllers for efficient power delivery.
3. Inverters: Applications in renewable energy systems, such as solar inverters.
4. Automotive: Power distribution and control in electric vehicles and automotive electronics.
5. Consumer Electronics: Power stages in devices like computers and home appliances.
Its high voltage and current ratings make it suitable for various high-efficiency applications.
1. Power Supplies: Switching regulators and converters for efficient power management.
2. Motor Control: Used in DC motor drives and controllers for efficient power delivery.
3. Inverters: Applications in renewable energy systems, such as solar inverters.
4. Automotive: Power distribution and control in electric vehicles and automotive electronics.
5. Consumer Electronics: Power stages in devices like computers and home appliances.
Its high voltage and current ratings make it suitable for various high-efficiency applications.
Package
The IRFR24N15DTRPBF is packaged in a TO-220 form factor, which is a popular package type for power MOSFETs. This package allows for efficient heat dissipation and is suitable for various applications, including power switching and amplification.
