IRFR3709ZTRPBF

Abbildungen dienen nur als Referenz

IRFR3709ZTRPBF

+Stückliste

MOSFET N-CH 30V 86A DPAK

  • HerstellerInfineon-Technologien

  • Herstellerteil #IRFR3709ZTRPBF

  • Auf Lager4928

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Infineon Technologies
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 86A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 6.5mOhm @ 15A, 10V
Vgs(th)(Max) @ Id 2.25V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 26 nC @ 4.5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2330 pF @ 15 V
Power Dissipation (Max) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak

Übersicht

Description

IRFR3709ZTRPBF is a high‑efficiency N‑channel enhancement MOSFET from International Rectifier (Infineon). It’s a surface‑mount, Pb‑free, RoHS‑compliant device supplied in a tape‑and‑reel package (ZTRPBF). Designed for switching and power‑management applications, it offers low on‑resistance and fast switching, with an intrinsic body diode for bidirectional current flow. Typical uses include DC–DC converters, motor drivers, and general high‑current load switching. The gate can be driven from logic‑level signals or dedicated gate drivers, enabling straightforward integration with microcontrollers and power electronics. For exact electrical specs (Vds, Id, Rds(on), switching characteristics), consult the datasheet.

Equivalent

To give precise equivalents, I need the device specs and package. IRFR3709ZTRPBF is an N-channel MOSFET; provide Vds, Id, Rds(on) at your gate drive, and package (D2PAK/TO-252). Do you want cross‑refs from TI, ST, OnSemi, or Infineon? Once you share the ratings, I’ll list exact drop‑in replacements with similar voltage/current and low Rds(on).

Features

IRFR3709ZTRPBF features (concise):
- N-channel, enhancement-mode power MOSFET
- 30 V drain–source voltage rating
- Very low on-resistance for high-efficiency operation
- High continuous current capability
- Logic-level gate drive (fully on at practical gate voltages)
- Fast switching performance
- Avalanche-rated ruggedness for inductive loads
- Pb-free, RoHS compliant
- Package: DPAK (TO-252) with Tape & Reel (TRPBF) packaging
Ideal for DC-DC converters, motor control, and other high-current switching applications.

Pinout

- Pin count: 3 pins (plus the drain tab in the DPAK package)
- Pinout: Pin 1 = Gate, Pin 2 = Drain (also the tab), Pin 3 = Source
- Function: N-channel enhancement-mode MOSFET (used as a switching/low-side or high-side switch in power circuits)

Manufacturer

The IRFR3709ZTRPBF is manufactured by Infineon Technologies (the IR/International Rectifier product line now owned by Infineon). Infineon is a global semiconductor company that designs and manufactures power semiconductors (MOSFETs, IGBTs), microcontrollers, and power-management and security ICs, serving automotive, industrial, and consumer-electronics markets.

Application

IRFR3709ZTRPBF is a logic-level N-channel power MOSFET. Common application areas:
- Switching regulators and DC-DC converters (buck/boost) for power supplies
- Motor drive and PWM switching for DC motors and stepper systems
- Load switches and power-path management in battery-powered devices
- Solar/battery power management, inverters, and energy conditioning
- General purpose high-efficiency switching in consumer, industrial, and telecom equipment
These cover portable electronics, industrial automation, and automotive-related power management where a low Rds(on) MOSFET is beneficial.

Package

DPAK (TO-252) surface-mount package; Pb-free, Tape-and-Reel (TRPBF).

Produkte, die mit IRFR3709ZTRPBF zusammenhängen