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IRFR5305TRLPBF
+StücklisteMOSFET P-CH 55V 31A DPAK
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HerstellerInfineon-Technologien
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Herstellerteil #IRFR5305TRLPBF
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Datenblatt IRFR5305TRLPBF DataSheet
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Auf Lager23754
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Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 31A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 65mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1200 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
Übersicht
Description
The IRFR5305TRLPBF is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for use in electronic circuits to amplify or switch electronic signals. This device is commonly utilized in power management applications due to its ability to handle high current and voltage levels efficiently.
Key features of the IRFR5305TRLPBF include:
- P-Channel MOSFET: It conducts when a negative voltage is applied to the gate relative to the source.
- Low On-Resistance: This ensures minimal power loss and higher efficiency during operation.
- High Current Capacity: It can handle substantial current loads, making it suitable for various power applications.
- Surface-Mount Design: Its packaging allows for easy integration into printed circuit boards (PCBs).
- Robust Performance: The device is designed to operate efficiently in demanding environments with high levels of reliability.
Typical applications for the IRFR5305TRLPBF include power supplies, motor drives, and other industrial and consumer electronics where efficient power management is crucial.
Key features of the IRFR5305TRLPBF include:
- P-Channel MOSFET: It conducts when a negative voltage is applied to the gate relative to the source.
- Low On-Resistance: This ensures minimal power loss and higher efficiency during operation.
- High Current Capacity: It can handle substantial current loads, making it suitable for various power applications.
- Surface-Mount Design: Its packaging allows for easy integration into printed circuit boards (PCBs).
- Robust Performance: The device is designed to operate efficiently in demanding environments with high levels of reliability.
Typical applications for the IRFR5305TRLPBF include power supplies, motor drives, and other industrial and consumer electronics where efficient power management is crucial.
Equivalent
The IRFR5305TRLPBF is a P-channel MOSFET. Equivalent products include:
1. FQP27P06 from ON Semiconductor
2. FDS6675 from ON Semiconductor
3. SI4463DY from Vishay
4. BUK9506-55A from Nexperia
When selecting an equivalent, ensure it meets necessary specifications like voltage, current, and Rds(on) for your application. Always compare datasheets to verify compatibility.
1. FQP27P06 from ON Semiconductor
2. FDS6675 from ON Semiconductor
3. SI4463DY from Vishay
4. BUK9506-55A from Nexperia
When selecting an equivalent, ensure it meets necessary specifications like voltage, current, and Rds(on) for your application. Always compare datasheets to verify compatibility.
Features
The IRFR5305TRLPBF is a Power MOSFET from Infineon Technologies, designed for applications requiring efficient switching and low on-resistance. Here are its key features:
1. N-Channel MOSFET: It utilizes an n-channel configuration, which is commonly used for high-speed switching applications.
2. 30V Drain-Source Voltage (Vds): The maximum breakdown voltage between the drain and source is 30 volts.
3. 25A Continuous Drain Current (Id): It can handle up to 25 amps of continuous current, making it suitable for high-power applications.
4. Rds(on) 8.5 mΩ: The on-resistance is 8.5 milliohms, allowing for efficient power handling with minimal losses.
5. Package Type: DPAK (TO-252): This surface-mount package is compact and suitable for space-constrained designs.
6. Logic Level Gate Drive: The MOSFET can be driven directly by logic-level voltages, simplifying interfacing with microcontrollers.
7. Environmentally Friendly: It is RoHS compliant and lead-free, aligning with modern environmental standards.
These features make the IRFR5305TRLPBF suitable for a wide range of applications, including automotive, industrial, and consumer electronics where efficient power management is critical.
1. N-Channel MOSFET: It utilizes an n-channel configuration, which is commonly used for high-speed switching applications.
2. 30V Drain-Source Voltage (Vds): The maximum breakdown voltage between the drain and source is 30 volts.
3. 25A Continuous Drain Current (Id): It can handle up to 25 amps of continuous current, making it suitable for high-power applications.
4. Rds(on) 8.5 mΩ: The on-resistance is 8.5 milliohms, allowing for efficient power handling with minimal losses.
5. Package Type: DPAK (TO-252): This surface-mount package is compact and suitable for space-constrained designs.
6. Logic Level Gate Drive: The MOSFET can be driven directly by logic-level voltages, simplifying interfacing with microcontrollers.
7. Environmentally Friendly: It is RoHS compliant and lead-free, aligning with modern environmental standards.
These features make the IRFR5305TRLPBF suitable for a wide range of applications, including automotive, industrial, and consumer electronics where efficient power management is critical.
Pinout
The IRFR5305TRLPBF is a P-channel MOSFET. It comes in a standard DPAK (TO-252) package, which typically features 3 pins. The pin count and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here controls the flow of current between the source and drain.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. It is typically connected to the load.
3. Source (S): This pin is where the current exits the MOSFET. It is usually connected to ground in a circuit configuration for a P-channel MOSFET.
Additionally, the tab or back plane of the package is often connected to the drain and serves as an additional pathway for heat dissipation. The IRFR5305TRLPBF is commonly used in applications requiring high efficiency and fast switching.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here controls the flow of current between the source and drain.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. It is typically connected to the load.
3. Source (S): This pin is where the current exits the MOSFET. It is usually connected to ground in a circuit configuration for a P-channel MOSFET.
Additionally, the tab or back plane of the package is often connected to the drain and serves as an additional pathway for heat dissipation. The IRFR5305TRLPBF is commonly used in applications requiring high efficiency and fast switching.
Manufacturer
The IRFR5305TRLPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in designing, manufacturing, and marketing a wide range of semiconductor solutions. Their products are used in various applications, including automotive, industrial power control, power management, digital security solutions, and more. Infineon's expertise lies in creating innovative semiconductor solutions that enhance energy efficiency, mobility, and security across different technological sectors.
Application
The IRFR5305TRLPBF is a P-channel MOSFET commonly used in various applications, including power management for DC-DC converters, load switching in battery-operated devices, and motor control circuits. It is also suitable for applications in automotive systems, industrial equipment, and consumer electronics where efficient power switching is required. Its low on-state resistance makes it ideal for applications requiring high efficiency and minimal power loss. Additionally, it is often used in high-frequency switching applications due to its fast switching speed.
Package
The IRFR5305TRLPBF is a P-channel MOSFET packaged in a D-Pak (TO-252) type. This surface-mount package is designed for efficient thermal performance and is commonly used in applications requiring compact and reliable power transistors.
