IRGS4B60KD1TRRP

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IRGS4B60KD1TRRP

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IGBT NPT 600V 11A D2PAK

  • HerstellerInfineon-Technologien

  • Herstellerteil #IRGS4B60KD1TRRP

  • Auf Lager6440

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Spezifikationen

Attribut Wert
Part Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 11 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
Power - Max 63 W
Switching Energy 73µJ (on), 47µJ (off)
Input Type Standard
Gate Charge 12 nC
Td (on / off) @ 25°C 22ns/100ns
Test Condition 400V, 4A, 100Ohm, 15V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number IRGS4B60
Current - Collector Pulsed (Icm) 22 A
Reverse Recovery Time (trr) 93 ns

Übersicht

Description

The IRGS4B60KD1TRRP is a high-voltage, N-channel MOSFET designed for power applications. It features a maximum drain-source voltage of 600V and a continuous drain current capability, making it suitable for high-power switching applications like industrial power supplies, motor drives, and LED lighting systems. This MOSFET is characterized by low on-resistance (RDS(on)), which enhances efficiency by reducing power losses during operation.
It typically has fast switching speeds, allowing for high-frequency operation, and comes in a TO-220 package, facilitating easy heat dissipation. The device is also designed to handle high thermal loads, which is critical in demanding environments.
Overall, the IRGS4B60KD1TRRP is ideal for engineers looking for reliable performance in energy-efficient designs while managing high voltages and currents.

Equivalent

The IRGS4B60KD1TRRP is an IGBT (Insulated Gate Bipolar Transistor). Equivalent products include the Infineon IGBT series (e.g., IGBT 60V), ON Semiconductor MBR series, and Toshiba GT series. Always verify specifications such as voltage, current ratings, and switching characteristics to ensure compatibility in your application.

Features

The IRGS4B60KD1TRRP is a high-performance N-channel insulated gate bipolar transistor (IGBT) designed for various power applications. Key features include:
1. Voltage Rating: Supports a maximum collector-emitter voltage (Vce) of 600V, suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous collector current (Ic) of up to 40A, making it suitable for high-load scenarios.
3. Low Switching Losses: Designed for efficient operation with low switching losses, improving overall system efficiency.
4. Fast Switching Speed: Offers rapid switching capabilities, enhancing performance in PWM applications and reducing heat generation.
5. Thermal Performance: Good thermal stability with a low thermal resistance, allowing effective heat dissipation.
6. Robust Packaging: Housed in a TO-247 package, ensuring durability and ease of mounting in power electronic circuits.
7. Applications: Ideal for use in inverters, motor drives, and other power electronics systems.
These features make the IRGS4B60KD1TRRP suitable for industrial and consumer applications where reliability and efficiency are crucial.

Pinout

The IRGS4B60KD1TRRP is an N-channel MOSFET manufactured by Infineon Technologies. It comes in a TO-247 package, which has a total of three pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET's switching operation. A voltage applied here turns the device on or off.
2. Drain (D) - This is the pin through which the main current flows when the device is on. It connects to the load in the circuit.
3. Source (S) - This pin serves as the common terminal for the device and is typically connected to ground or the negative side of the circuit.
The IRGS4B60KD1TRRP is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 600V and has a continuous current rating suitable for power applications.

Manufacturer

The IRGS4B60KD1TRRP is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in semiconductor and system solutions. The company provides products for various applications, including automotive, industrial power control, and consumer electronics. Infineon focuses on efficient energy management and offers products such as power semiconductors, microcontrollers, and sensors. Their solutions are utilized in areas like automotive electronics, power supplies, and renewable energy systems, making them a key player in the semiconductor industry.

Application

The IRGS4B60KD1TRRP is an insulated gate bipolar transistor (IGBT) primarily used in industrial applications. Its application areas include:
1. Power Inverters: Used in renewable energy systems like solar and wind power.
2. Motor Drives: Employed in various motor control applications, including electric vehicles and industrial automation.
3. Welding Equipment: Utilized in arc welding machines for efficient power control.
4. HVAC Systems: Applied in heating, ventilation, and air conditioning systems for energy efficiency.
5. Induction Heating: Used in induction cooktops and industrial heating applications.
Its ability to handle high voltage and current makes it suitable for these demanding applications.

Package

The IRGS4B60KD1TRRP is packaged in a TO-220 format. This type of package is commonly used for high-power semiconductor devices and provides effective thermal management and electrical performance.

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