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IRL3103PBF
+StücklisteMOSFET N-CH 30V 64A TO220AB
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HerstellerInfineon-Technologien
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Herstellerteil #IRL3103PBF
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Auf Lager2048
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 34A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
| Power Dissipation (Max) | 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
Übersicht
Description
Students engage in critical analysis of current international issues, enhancing their ability to assess the impact of political, economic, and social factors on global affairs. Case studies and theoretical frameworks are utilized to foster analytical skills and encourage informed discussions.
By the end of the course, participants are expected to demonstrate a nuanced understanding of international relations, equipping them for careers in diplomacy, international organizations, or academic pursuits in political science.
Equivalent
Features
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain currents (ID) up to 55A, ensuring robust performance in high-current circuits.
3. RDS(on): It has a low on-resistance (RDS(on)) of approximately 8.7 mΩ at a gate voltage (VGS) of 10V, which minimizes power loss and heat generation during operation.
4. Fast Switching: The IRL3103PBF features rapid switching capabilities, enhancing efficiency in applications like power supplies and motor drivers.
5. Package: It comes in a TO-220 package, facilitating easy heat dissipation and mounting in a variety of designs.
6. Gate Threshold Voltage: The threshold voltage (VGS(th)) is low, allowing it to be driven effectively by logic-level signals.
Overall, the IRL3103PBF is ideal for applications requiring efficient power management and thermal performance.
Pinout
1. Gate (G) - The control terminal used to turn the MOSFET on or off.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is on.
3. Source (S) - The terminal through which the current flows into the MOSFET when it is on.
4. Tab - Often connected to the source and can be used for heat dissipation.
The IRL3103PBF is designed for low-voltage, high-speed switching applications. It features a low on-resistance, enabling efficient power management. It is capable of handling significant current and is often used in various applications, including power supplies, motor drivers, and automotive systems.
Manufacturer
Infineon is known for its expertise in power management and has a strong presence in the automotive sector, producing components that enhance vehicle efficiency and performance. The IRL3103PBF is a N-channel MOSFET designed for high-speed switching applications, making it suitable for a variety of power management tasks in electronic devices.
Application
1. Power Management: Ideal for DC-DC converters and power supplies due to its low on-resistance.
2. Switching Applications: Suitable for high-speed switching in motor drives and automotive systems.
3. Load Switching: Employed in load management for lighting and heating control.
4. Signal Switching: Used in signal routing within communication devices.
5. Audio Amplifiers: Incorporated in audio applications for efficient amplification.
Its capabilities make it versatile for consumer electronics, industrial equipment, and automotive applications.