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IRLML2803TRPBF
+StücklisteMOSFET N-CH 30V 1.2A SOT23
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HerstellerInfineon-Technologien
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Herstellerteil #IRLML2803TRPBF
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Datenblatt IRLML2803TRPBF DataSheet
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Paket SOT23
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Auf Lager3918
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 1.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 250mOhm @ 910mA, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 5 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 85 pF @ 25 V |
| PowerDissipation(Max) | 540mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
Übersicht
Description
Key specifications include a drain-source voltage (V_DS) of -30V, a continuous drain current (I_D) of -3.3A, and a low on-resistance (R_DS(on)) which ensures minimal power loss and enhanced efficiency. The IRLML2803TRPBF is packaged in a SOT-23 form factor, making it suitable for compact and space-constrained applications such as mobile devices, power management circuits, and battery-operated electronics.
Its fast switching speed and low gate charge make it particularly effective in high-frequency applications. Overall, the IRLML2803TRPBF offers reliable performance in a variety of electronics, balancing efficiency and compact design.
Equivalent
1. BSN10 - NXP Semiconductors
2. SI2333DS - Vishay Siliconix
3. BSS138 - ON Semiconductor
4. 2N7002 - NXP or Fairchild Semiconductor
5. FDS8884 - Fairchild Semiconductor
Ensure to verify the specifications such as voltage, current, and package type to confirm compatibility with your specific application.
Features
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of 30V and can handle a continuous drain current (I_D) of 3.7A at 25°C.
2. Low On-State Resistance: This MOSFET offers a low R_DS(on) of approximately 0.028 ohms, which facilitates efficient power management by minimizing power loss during operation.
3. Small Form Factor: The device is housed in a compact SOT-23 package, making it suitable for space-constrained applications.
4. Enhanced Switching Performance: It features fast switching speeds, which enhance performance in high-frequency applications.
5. Thermal Characteristics: This component exhibits good thermal performance, aiding in heat dissipation and reliability under varying thermal conditions.
6. Applications: It is primarily used in applications like DC-DC converters, power management circuits, and as a load switch in portable devices.
These features make the IRLML2803TRPBF versatile for various consumer electronics and industrial applications requiring efficient power handling and compact design.
Pinout
1. Pin 1 (Gate): This is the control terminal of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Pin 2 (Source): This is the terminal through which the current enters the MOSFET when the device is on. It is typically connected to the ground or a negative voltage in an N-channel MOSFET.
3. Pin 3 (Drain): This is the terminal through which the current exits the MOSFET. The drain is connected to the load in the circuit.
The IRLML2803TRPBF is used for switching and amplification applications due to its fast switching speed and high efficiency.
Manufacturer
Application
1. DC-DC Converters: Utilized in voltage regulation and power management systems.
2. Load Switches: Acts as an electronic switch for controlling power to different sections of a circuit.
3. Motor Drives: Used in low to medium power electric motor control systems.
4. Battery Management Systems: Helps in efficient charging and discharging in portable devices.
5. LED Drivers: Used in driving and controlling LED lighting systems.
6. Consumer Electronics: Found in devices requiring compact, high-performance power control.
These applications benefit from its low on-resistance and fast switching capabilities.