IRLR2905TRPBF

Abbildungen dienen nur als Referenz

IRLR2905TRPBF

+Stückliste

MOSFET N-CH 55V 42A DPAK

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4V, 10V
RdsOn(Max)@IdVgs 27mOhm @ 25A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 48 nC @ 5 V
Vgs(Max) ±16V
InputCapacitance(Ciss)(Max)@Vds 1700 pF @ 25 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

Übersicht

Description

The IRLR2905TRPBF is a N-channel HEXFET Power MOSFET from Infineon, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 55V
- Current Rating: 30A (continuous)
- Low On-Resistance (RDS(on)): 30mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-speed performance
- Logic-Level Gate Drive: Compatible with 5V/10V signals
- Package: TO-252 (DPAK), surface-mountable
Common applications include DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics. Its low conduction losses and high current capability make it ideal for energy-efficient designs.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the IRLR2905TRPBF (N-channel MOSFET, 55V, 30A) include:
- IRLZ44NPBF (55V, 47A)
- IRFZ44NPBF (55V, 49A)
- STP55NF06L (60V, 55A)
- FQP30N06L (60V, 32A)
Check datasheets for exact specs like RDS(on) and gate charge. Alternatives may vary slightly in current handling and switching characteristics.

Features

The IRLR2905TRPBF is a N-channel MOSFET with the following key features:
- Voltage Rating: 55V (Drain-Source)
- Current Rating: 30A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 30mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Low Gate Charge (Qg): 18nC (typ) for efficient switching
- Package: TO-252 (DPAK), surface-mount
- Avalanche Energy Rated: Robust against inductive spikes
Ideal for power switching, motor control, and DC-DC converters due to its low RDS(on) and high current capability.

Pinout

The IRLR2905TRPBF is a TO-252 (DPAK) packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- 55V Drain-Source Voltage (VDS)
- 61A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 0.027Ω @ 10V VGS)
- Logic-Level Gate Drive (4V threshold)
Commonly used in power switching, motor control, and DC-DC converters.

Application

The IRLR2905TRPBF is a power MOSFET commonly used in:
1. Switching Power Supplies – Efficient power conversion in DC-DC and AC-DC circuits.
2. Motor Control – Drives motors in robotics, automotive, and industrial systems.
3. Battery Management – Protects and controls battery charging/discharging in portable devices.
4. LED Drivers – Regulates current in high-power LED lighting.
5. Load Switching – Fast on/off control in electronic circuits.
Its low on-resistance (RDS(on)) and high current handling (up to 30A) make it ideal for high-efficiency applications.

Package

The IRLR2905TRPBF is a Power MOSFET packaged in a TO-262 (D2PAK) type. This surface-mount package is designed for high-power applications, offering efficient thermal performance and a compact footprint. It is commonly used in switching circuits, power supplies, and motor control. The "TR" suffix indicates it is supplied on a tape-and-reel for automated assembly.

Produkte, die mit IRLR2905TRPBF zusammenhängen

  • Schnellangebot

  • Senden Sie Ihre Angebotsanfrage für IRLR2905TRPBF Mit diesem Formular können Sie uns innerhalb von 12 Stunden kontaktieren.