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IS29GL256-70SLEB
+StücklisteIC FLASH 256MBIT PAR 56TSOP I
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HerstellerISSI, Integrated Silicon Solution Inc.
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Herstellerteil #IS29GL256-70SLEB
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Datenblatt IS29GL256-70SLEB DataSheet
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Paket TSOP-56
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Auf Lager4207
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mb (32M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 200µs |
| Access Time | 70 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features of the IS29GL256-70SLEB include a 70 ns access time, which makes it suitable for applications demanding quick data retrieval. It operates with a single 3.0V power supply, which helps in minimizing power consumption, and supports both asynchronous and page read operations for flexibility in accessing stored data.
The device is designed for high-speed programming and erasing, with sector erase capability allowing for the modification of specific sections without affecting the entire memory content. Its robust architecture provides data retention for up to 20 years and can endure a high number of program/erase cycles, making it ideal for embedded systems, consumer electronics, and industrial applications where durability and reliability are critical.
Equivalent
1. Micron MT28F256L18FFPI: Similar parallel NOR Flash with comparable density and performance.
2. Cypress S29GL256P: Another 256 Mb NOR Flash with similar characteristics.
3. Winbond W29GL256S: Offers similar performance and parallel interface.
4. Macronix MX29LV256: 256 Mb NOR Flash with a parallel interface.
These alternatives generally match in terms of memory density, interface, and performance.
Features
Pinout
Key functions of the IS29GL256-70SLEB include:
1. Read/Write Operations: Allows for both read and write operations, with a random access time of 70 ns.
2. Erase Operations: Supports sector and block erase operations, allowing for data modification.
3. Data Retention and Endurance: Offers high data retention capabilities and can endure numerous program/erase cycles.
4. Low Power Consumption: Designed for low power consumption, making it suitable for battery-powered devices.
5. Sector Protection: Features sector protection to prevent accidental data modification.
6. Compatibility: Compatible with 3.0 Volt-only systems, providing ease of integration in various designs.
The device's architecture and pin configuration allow for ease of use and integration in applications requiring reliable, high-density flash memory storage.
Manufacturer
Application
1. Embedded Systems: Utilized for firmware storage in microcontrollers and other embedded applications.
2. Consumer Electronics: Found in devices such as set-top boxes, digital cameras, and smart appliances.
3. Industrial Automation: Used for storing critical software in automation and control systems.
4. Automotive Electronics: Suitable for infotainment systems and advanced driver-assistance systems (ADAS).
5. Networking Equipment: Employed in routers, switches, and other networking devices for configuration and firmware storage.