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IS41LV16100D-50TLI
+StücklisteIC DRAM 16MBIT PAR 50TSOP II
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HerstellerISSI, Integrated Silicon Solution Inc.
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Herstellerteil #IS41LV16100D-50TLI
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Datenblatt IS41LV16100D-50TLI DataSheet
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Paket TSOP-50
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Auf Lager7140
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | DRAM - EDO |
| Memory Size | 16Mb (1M x 16) |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
Its -50TLI designation indicates a 50ns access time, allowing for rapid data access, and the TLI suffix suggests that the device is designed to operate in industrial temperature ranges. The IS41LV16100D-50TLI supports a fast page mode for improved performance in data-intensive applications, and it is manufactured using advanced CMOS technology for reduced power consumption and enhanced reliability. Typical applications include digital consumer electronics, networking equipment, and industrial electronics. Its compact form factor and robust performance make it an attractive choice for designers looking to optimize memory performance and efficiency in their systems.
Equivalent
1. AS4C1M16E5 from Alliance Memory
2. MT48LC1M16A1 from Micron Technology
3. HYB39S16160 from Infineon Technologies
Always verify compatibility regarding voltage, speed, and package type before substituting.
Features
Pinout
- Address Pins (A0–A9): Used to select the row and column addresses within the memory.
- Data Input/Output Pins (DQ0–DQ15): Serve as the bi-directional data lines for read and write operations.
- Row Address Strobe (RAS#): Activates the row address when a row is being accessed.
- Column Address Strobe (CAS#): Activates the column address when accessing a column within the selected row.
- Write Enable (WE#): Indicates whether a read or write operation is being performed.
- Output Enable (OE#): Controls the data output buffers during read operations.
- Clock (CLK): Synchronizes the operations.
- Chip Select (CS#): Enables or disables the chip.
- Power Supply (VCC) and Ground (GND): Provide the necessary power for the DRAM operation.
These pins collectively enable addressing, data transfer, and control signals necessary for read/write operations in the DRAM.
Manufacturer
Application
1. Consumer Electronics: Utilized in devices like set-top boxes and gaming consoles for data buffering and caching.
2. Networking Equipment: Employed in routers and switches for efficient data handling and temporary storage.
3. Industrial Systems: Used in control systems and automation equipment where reliable memory performance is needed.
4. Communication Devices: Supports data processing in mobile and satellite communication systems.
5. Embedded Systems: Integrated into various embedded applications requiring dynamic memory access.
These applications benefit from the chip's balance of speed, capacity, and cost-effectiveness.