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IC DRAM 512MBIT PAR 54TFBGA
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HerstellerISSI, Integrated Silicon Solution Inc.
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Herstellerteil #IS42S16320F-7BLI-TR
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Auf Lager8923
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 512Mbit |
| Memory Organization | 32M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 143 MHz |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-TW-BGA (8x13) |
| Base Product Number | IS42S16320 |
Übersicht
Description
Key features include:
1. Memory Type: DDR SDRAM (Double Data Rate Synchronous Dynamic RAM).
2. Organization: 2M x 8 bits, allowing it to store a total of 16 megabits of data.
3. Speed: Operates at a maximum clock frequency, typically around 133 MHz, supporting high data transfer rates.
4. Voltage: Runs on a supply voltage of 2.5V, which contributes to its low power characteristics.
5. Packaging: Comes in a compact, space-saving package, suitable for various designs.
This chip is ideal for applications requiring efficient memory solutions with a balance of performance and power efficiency.
Equivalent
1. MT48LC16M32A2P-75
2. H5TQ2G63AFR
3. K4T1G164QE-3
Check specifications to ensure compatibility for specific applications, such as voltage, speed, and pin configuration.
Features
1. Type: Mobile DDR SDRAM.
2. Density: 256 Megabits, organized as 32M x 8 bits.
3. Data Rate: Operates at 7.5 ns cycle time (DDR).
4. Voltage: Operates at 1.8V, making it suitable for low-power applications.
5. Package: Typically available in a 54-ball FBGA (Fine Ball Grid Array) form factor.
6. Functionality: Supports burst read and write operations, enhancing data throughput.
7. Temperature Range: Suitable for industrial applications with a standard operating temperature range.
8. Applications: Commonly used in mobile devices, portable applications, and other consumer electronics requiring efficient memory solutions.
These features make the IS42S16320F-7BLI-TR ideal for applications needing high performance and low power consumption.
Pinout
Pin Functions:
1. Address Pins (A0-A10): Used to select memory locations.
2. Data Pins (DQ0-DQ15): 16-bit data input/output lines.
3. Control Pins:
- CLK: Clock signal for synchronous operations.
- CKE: Clock enable signal.
- CS: Chip select to enable/disable the device.
- RAS, CAS, WE: Row address strobe, column address strobe, and write enable for memory operations.
4. Baud Pins (BA0, BA1): Bank address pins for selecting memory banks.
5. VDD/VSS: Power supply and ground pins.
This device provides high-speed access and is commonly used in applications requiring fast memory solutions.
Manufacturer
The company serves a diverse range of markets, emphasizing quality and reliability in its products. With a strong commitment to research and development, ISSI continues to expand its product lines to meet the evolving demands of technology and customer requirements. Overall, ISSI stands out in the semiconductor industry for its expertise in memory technologies and commitment to delivering high-quality products.
Application
1. Consumer Electronics: Televisions, set-top boxes, and gaming consoles.
2. Computing: Personal computers, laptops, and servers for improved performance.
3. Networking Equipment: Routers and switches needing fast data processing.
4. Industrial Applications: Embedded systems and control systems.
5. Telecommunications: Mobile devices and base stations for efficient data handling.
Its high-speed capabilities and low power consumption make it suitable for modern electronic devices.