IS42S32160C-75BLI

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IS42S32160C-75BLI

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IC DRAM 512MBIT PARALLEL 90WBGA

365 Tage Qualitätsgarantie

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90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Supplier ISSI, Integrated Silicon Solution Inc
Package / Case Tray
Part Status Obsolete
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 512Mb (16M x 32)
Memory Interface Parallel
Clock Frequency 133 MHz
Access Time 6 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

Übersicht

Description

IS42S32160C-75BLI is a high-density synchronous DRAM (SDRAM) device from ISSI. It is organized as 32M x 16-bit words (about 512 Mbit total) and is rated for a -75 speed grade (typical access time around 75 ns).
Key points:
- Organization: 32M words × 16 bits
- Speed: 75 ns (speed grade)
- Interface: multiplexed address/data SDRAM with standard signals (A[10:0], BA[1:0], CS#, RAS#, CAS#, WE#, CK/CK#, DQ[15:0])
- Voltage: typically 3.3V (check datasheet for exact operating range)
- Package: BLI (ball-leadless) package
- Features: synchronous operation, auto-refresh, burst/pipelined access, multiple banks per device
- Applications: embedded systems, graphics buffers, memory for consumer/industrial electronics
Note: Exact electrical specs, pinout, timing, and mechanical dimensions vary by revision and package. Refer to the official ISSI IS42S32160C-75BLI datasheet for complete details.

Features

Here are the likely features of IS42S32160C-75BLI (ISSI):
- 512 Mb total capacity: 32M × 16 organization (32M x 16-bit)
- 3.3 V supply
- Synchronous DRAM with multi-bank architecture (4 banks)
- Burst data capability: typical BL options (2/4/8)
- CAS latency options around 2 and 3 (depends on mode)
- Auto-refresh and self-refresh support
- Page-mode operation with interleaved bursts
- 75 ns speed grade
- Pb-free package (BLI)
Note: for exact timing specs and electrical details, please refer to the official datasheet.

Pinout

- Pin count: 54 pins (TSOP II, BLI package)
- Function: IS42S32160C-75BLI is a 32M × 16-bit dynamic RAM (DRAM) device. It uses multiplexed row/column addresses with bank select (BA0/BA1) and a 16-bit data bus (DQ0–DQ15), controlled by standard DRAM signals (CS, RAS, CAS, WE).

Manufacturer

Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
Company type: A US-based fabless semiconductor company that designs and markets memory ICs (DRAM and SRAM).

Application

IS42S32160C-75BLI is a high-density synchronous DRAM. Typical application areas include:
- Main memory for desktops, laptops, and embedded systems
- Graphics/frame-buffer and video memory for displays and GPUs
- High-speed memory buffers/caches in network/telecom equipment (switches, routers, base stations)
- Embedded consumer electronics (set-top boxes, DVD/BD players, TVs, DVRs)
- Industrial and automotive electronics requiring reliable SDRAM in controllers and monitoring systems

Package

The IS42S32160C-75BLI comes in a 54‑pin TSOP II plastic package (Pb‑free, RoHS compliant).

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