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IS42S32800J-6BLI
+StücklisteIC DRAM 256MBIT PARALLEL 90TFBGA
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HerstellerISSI, Integrated Silicon Solution Inc.
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Herstellerteil #IS42S32800J-6BLI
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Datenblatt IS42S32800J-6BLI DataSheet
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Paket TFBGA-90
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Auf Lager3576
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 256Mb (8M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features of the IS42S32800J-6BLI include a burst length of 1, 2, 4, 8, or full-page, programmable read or write burst, and a CAS latency of 2 or 3. It supports auto-refresh and self-refresh modes, enhancing its efficiency and reliability in maintaining data integrity. The chip comes in a 90-ball BGA or TSOP-II package, making it versatile for integration into various system designs.
Overall, the IS42S32800J-6BLI provides an effective solution for memory-intensive applications, such as networking equipment, consumer electronics, and industrial devices, where high performance and low power consumption are crucial.
Equivalent
1. Micron MT48LC32M8A2 – A similar SDRAM with the same capacity and organization.
2. Samsung K4S511632N – Offers comparable specifications in terms of speed and storage.
3. Hynix HY57V283220T – Another SDRAM with matching features and performance.
These alternatives generally match in speed, capacity, and form factor, making them suitable replacements. Always verify specific requirements and compatibility for your application.
Features
1. Density and Organization: It is organized as 4M x 32 bits, providing a total memory size of 128MB.
2. Speed and Access Time: The "-6B" denotes a clock speed of 166 MHz, with a CAS latency of 3 cycles, facilitating fast data access.
3. Voltage: Operates at a supply voltage of 3.3V, which is standard for SDRAM.
4. Package: Comes in a 90-ball BGA (Ball Grid Array) package, suitable for compact and high-density applications.
5. Temperature Range: The "I" in the part number indicates an industrial temperature range of -40°C to 85°C, making it suitable for various demanding environments.
6. Refresh Mode: Supports auto-refresh and self-refresh modes, ensuring data integrity over extended periods.
7. Burst Length: Offers burst lengths of 1, 2, 4, 8, and full page, enhancing flexibility in data handling.
These features make the IS42S32800J-6BLI suitable for a wide range of applications, including industrial and consumer electronics.
Pinout
This SDRAM chip has a pin count of 54, specifically in a TSOP (Type II) package. The pins on the IS42S32800J-6BLI serve several functions, including:
1. Address Inputs (A0-A11): These are used to select the rows and columns for accessing data.
2. Data Inputs/Outputs (DQ0-DQ7): These are bidirectional lines used for data transfer.
3. Clock Input (CLK): This synchronizes the operations within the chip.
4. Command and Control Pins (CS, RAS, CAS, WE): Used to manage read/write operations and other commands.
5. Bank Address Inputs (BA0, BA1): These are used to select one of the four internal memory banks.
6. Data Mask (DQM): Controls the input/output buffers for masking data.
7. Other Pins: Includes VDD and VSS for power supply and ground, respectively.
The IS42S32800J-6BLI offers a high-speed memory solution, operating at a clock frequency of up to 166 MHz, and is commonly used in applications like embedded systems and consumer electronics.