IS46LQ32256EA-062B2LA3

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IS46LQ32256EA-062B2LA3

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Attribut Wert
EU Ro HS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8542.32.00.36
Automotive Yes
PPAP Yes
Chip Density (bit) 8G
Number of Bits / Word (bit) 32
Interface Type LVSTL
Minimum Operating Supply Voltage (V) 1.06|1.7
Typical Operating Supply Voltage (V) 1.1|1.8
Maximum Operating Supply Voltage (V) 1.17|1.95
Operating Current (m A) 660
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 125
Mounting Type Surface Mount
Package Height 0.8(Max)
Package Width 10
Package Length 14.5
PCB changed 200
Package / Case BGA
Supplier Device Package TFBGA
Pin Count 200
DRAM Type Mobile LPDDR4 SDRAM
Organization 256Mx32
Number of Internal Banks 16
Number of Words per Bank 16M
Data Bus Width (bit) 32
Maximum Clock Rate (M Hz) 3200
Maximum Access Time (ns) 3.6
Address Bus Width (bit) 36
Number of I / O Lines (bit) 32
Supplier Temperature Grade Automotive
Process Technology CMOS

Übersicht

Description

The IS46LQ32256EA-062B2LA3 is a high-performance, low-power DRAM chip commonly used in various electronic devices for data storage and retrieval. This particular model is part of the IS46LQ family, known for its advanced speed and efficiency. It features a 256M density, designed for applications that require quick access to large amounts of data, such as in computing and communication systems.
Key attributes of the IS46LQ32256EA-062B2LA3 include its low operational voltage, which reduces power consumption, and its high data transfer rate, which enhances performance in demanding environments. Its architecture supports DDR (Double Data Rate) signaling, allowing for data to be transferred on both the rising and falling edges of the clock signal, effectively doubling the data throughput without increasing the clock frequency.
The chip is built using advanced semiconductor processes, ensuring reliability and durability in various temperatures and conditions. Its compact design makes it suitable for integration into a wide range of devices, from consumer electronics to industrial systems.

Equivalent

The IS46LQ32256EA-062B2LA3 is a 256Mb SDRAM chip from ISSI. Equivalent products could include other 256Mb SDRAMs with similar specifications from manufacturers like Micron, Samsung, or Hynix. Look for chips with matching speed grades, voltage levels, and package type for the most compatible alternatives. Always check detailed datasheets to ensure exact compatibility.

Features

The IS46LQ32256EA-062B2LA3 is a dynamic random-access memory (DRAM) chip, specifically a low-power DDR4 SDRAM. It typically features a 256 Mb density organized as 32M x 8 bits. This component is designed for high performance and low power consumption, making it suitable for a variety of applications like mobile devices, consumer electronics, and computing systems.
Key features include:
- High-Speed Performance: Operates at high frequencies up to 1600 MHz, which is equivalent to 3200 MT/s (megatransfers per second).
- Low Power Consumption: Incorporates features such as deep power-down mode and temperature-compensated self-refresh (TCSR) to reduce energy use.
- Wide Operating Voltage Range: Functions within a standard voltage range of 1.1V to 1.2V, making it energy-efficient.
- Advanced Features: Supports data-bus inversion (DBI) and per-bank refresh for efficient data handling and integrity.
- Package Type: Often available in a compact package suitable for space-constrained applications.
These attributes make it a versatile choice for applications requiring efficient memory solutions.

Pinout

The IS46LQ32256EA-062B2LA3 is a DRAM chip manufactured by Integrated Silicon Solution Inc. (ISSI). This particular model is a 256Mb (megabit) LPDDR (Low-Power Double Data Rate) DRAM, organized as 32M x 8 bits.
In terms of pin count, the IS46LQ32256EA comes in a 134-ball BGA (Ball Grid Array) package. BGA packages are widely used in memory chips due to their efficient use of space and capability to handle higher pin densities.
As for its function, this DRAM chip is designed to provide high-speed, low-power memory for a range of applications, including mobile devices, automotive systems, and other consumer electronics. Being an LPDDR memory, it offers lower power consumption compared to standard DDR memory, making it suitable for power-sensitive applications.
Overall, the IS46LQ32256EA is an efficient memory solution for applications requiring high performance and low power usage.

Manufacturer

The IS46LQ32256EA-062B2LA3 is manufactured by ISSI (Integrated Silicon Solution, Inc.). ISSI is a technology company specializing in the design and production of high-performance integrated circuits. Their product portfolio includes a wide range of memory solutions, such as DRAM, SRAM, and flash memory, as well as other IC components like analog and mixed-signal products. ISSI's products are used in various applications, including automotive, communications, industrial, and digital consumer markets. The company is known for providing reliable and long-term supply of its products, which is particularly important for industrial and automotive applications.

Application

The IS46LQ32256EA-062B2LA3 is a high-speed, low-power DRAM used in various applications. Its primary uses include:
1. Consumer Electronics: Providing memory for devices like smartphones, tablets, and smart TVs.
2. Networking Equipment: Enhancing performance in routers, switches, and other networking hardware.
3. Industrial Applications: Offering reliable memory solutions for industrial control systems and automation.
4. Automotive Systems: Supporting infotainment systems and advanced driver-assistance systems (ADAS).
5. Computing: Serving as a memory module in laptops and desktops for efficient data processing.
These applications benefit from the DRAM's efficiency, speed, and low power consumption.

Package

The IS46LQ32256EA-062B2LA3 is a DRAM component with a BGA (Ball Grid Array) package type.

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