IS46TR16256AL-125KBLA2

The IS46TR16256AL-125KBLA2 is a DDR3 SDRAM memory module designed for high-performance applications. It features a 2Gb capacity in a 16Mx16 organization, making it suitable for various computing tasks that require fast data processing. Operating at a frequency of 1250 MHz (DDR3-1250), it supports a clock speed of 625 MHz with a data rate that significantly enhances system performance.
The module adheres to JEDEC standards, ensuring compatibility with various systems. It includes features such as a low voltage operation (1.5V), which contributes to energy efficiency. Additionally, the memory chip offers advanced functionalities like an on-die termination and a burst length of 8, optimizing both data transfer rates and signal integrity.
Typically used in laptops, desktops, and servers, this DRAM is essential for applications demanding high bandwidth, such as gaming, graphic design, and data-intensive computing. Overall, the IS46TR16256AL-125KBLA2 is a reliable choice for enhancing system memory performance in modern electronics.

The IS46TR16256AL-125KBLA2 is a DDR3 SDRAM chip. Equivalent products include:
1. MT41J256M8 (Micron)
2. H5TQ2G83EFR (Hynix)
3. K3AAG2G40B (Samsung)
4. IDT72V361L15 (Integrated Device Technology)
Always verify compatibility regarding voltage, speed, and timing parameters before substituting.

The IS46TR16256AL-125KBLA2 is a high-performance DDR3 SDRAM memory chip designed for various applications, including networking and telecommunications. Key features include:
1. Density: 2 Gigabit capacity, organized as 256Mx16 bits.
2. Speed: Operates at a clock frequency up to 125 MHz, with data transfer rates of up to 1.6 Gbps.
3. Voltage: Low operating voltage of 1.5V, enhancing power efficiency.
4. Package: Available in a compact 78-ball FBGA (Fine Ball Grid Array) package for space-constrained designs.
5. Latency: Supports various CAS latency options for optimized performance.
6. Architecture: Supports burst read/write operations, enhancing throughput.
7. Temperature Range: Suitable for industrial applications with a wide operating temperature range.
This chip is ideal for applications requiring reliable and high-speed memory performance.

The IS46TR16256AL-125KBLA2 is a 256 Megabit (32 Megabytes) DDR3 SDRAM memory chip with a pin count of 78. It operates at a speed of 125 MHz and is organized as 8 banks of 16 Meg x 16 bits.
The primary functions of the chip include data storage and retrieval, supporting various DDR3 commands such as READ, WRITE, and REFRESH. It features a differential clock input, data input/output, power management, and control signals required for memory operations.
Additionally, it has a low voltage operation of 1.5V, providing improved power efficiency compared to earlier SDRAM technologies. The chip is designed for high-performance applications in computing and networking equipment.

The IS46TR16256AL-125KBLA2 is manufactured by Integrated Silicon Solution, Inc. (ISSI). ISSI is a semiconductor company that specializes in the design and production of high-performance integrated circuits. The company focuses primarily on memory products, including DRAM, SRAM, and Flash memory solutions, catering to various applications such as consumer electronics, telecommunications, automotive, and industrial markets. With a commitment to innovation and quality, ISSI provides products that support a broad range of electronic devices, playing a pivotal role in the semiconductor industry.

The IS46TR16256AL-125KBLA2 is a 256Mb DDR3 SDRAM memory chip, primarily used in various applications such as networking equipment, telecommunications, industrial automation, automotive systems, and consumer electronics. Its high-speed data access and low power consumption make it suitable for mobile devices, laptops, and embedded systems. Additionally, it can be utilized in data storage solutions, gaming consoles, and high-performance computing environments, where large data bandwidth and reliability are essential.

The IS46TR16256AL-125KBLA2 is packaged in a TSOP-II (Thin Small Outline Package) form factor, typically used for memory devices.