Abbildungen dienen nur als Referenz
IS61WV51216BLL-10MLI
+StücklisteIC SRAM 8MBIT PARALLEL 48MINIBGA
-
HerstellerISSI, Integrated Silicon Solution Inc.
-
Herstellerteil #IS61WV51216BLL-10MLI
-
Datenblatt IS61WV51216BLL-10MLI DataSheet
-
Paket TFBGA-48
-
Auf Lager3994
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 8Mb (512K x 16) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 10ns |
| Access Time | 10 ns |
| Voltage - Supply | 2.4V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
This SRAM module includes features like automatic power-down, which reduces power usage when the chip is not in active use, and data retention capabilities even at lower voltages, ensuring reliability in data storage. The "BLL" in its name denotes its low-power characteristics, while the "MLI" refers to its industrial temperature range of -40 to 85 degrees Celsius, making it robust for various environmental conditions.
The IS61WV51216BLL-10MLI is packaged in a compact 44-pin TSOP II, ensuring it can be easily integrated into a wide variety of electronic systems.
Equivalent
1. Cypress CY62167EV30LL-45ZSXI
2. Alliance AS6C8016-55ZIN
3. Renesas R1LP0516ESP-5SI#B0
These alternatives offer similar low-power SRAM specifications and can be used in place of the ISSI IS61WV51216BLL-10MLI for most applications. Always verify pin compatibility and electrical characteristics before substituting to ensure suitability for your specific application.
Features
1. Capacity and Organization: 8 megabits (512K x 16-bit configuration).
2. Speed: Fast access time of 10 ns, ensuring quick data retrieval and processing.
3. Voltage: Operates on a single 2.5V to 3.6V power supply, supporting low power consumption and efficient performance.
4. Data Retention: Designed for low power operation with data retention at 2.5V, suitable for battery-powered applications.
5. Low Power Consumption: Features low operating and standby currents, enhancing energy efficiency.
6. Packaging: Comes in a 44-pin TSOP-II (Thin Small Outline Package) type, enabling compact design integration.
7. Temperature Range: Industrial temperature range from -40°C to 85°C, suitable for a variety of environmental conditions.
8. Reliability: Offers high reliability and stability, typical of Cypress/ISSI memory products, making it ideal for embedded systems, automotive, and industrial applications.
These features make it a versatile choice for applications requiring quick data access and energy efficiency.
Pinout
- Address Pins (A0-A18): Used to specify the memory address for data access.
- Data Input/Output Pins (I/O0-I/O15): Serve as the bidirectional data pins for reading from and writing to the SRAM.
- Chip Enable Pins (CE): Used to enable or disable the chip, thus allowing or restricting access.
- Write Enable Pin (WE): Controls the writing operations to the SRAM.
- Output Enable Pin (OE): Facilitates data output from the SRAM.
- Byte Enable Pins (LB and UB): Used to enable the lower or upper byte of the data bus during read/write operations.
- Power Supply Pins (VCC and VSS/GND): Provide power to the chip, with VCC being the positive supply and VSS being the ground.
This configuration supports high-speed data access with a low power consumption profile, making it suitable for various applications requiring reliable static RAM.
Manufacturer
Application
1. Consumer Electronics: Used in devices like digital cameras and gaming consoles for quick data retrieval.
2. Industrial Automation: Functions in control systems and data logging equipment.
3. Networking: Supports faster data processing in routers and switches.
4. Automotive Systems: Utilized in infotainment systems and advanced driver-assistance systems (ADAS).
5. Telecommunications: Employed in base stations and network infrastructure.
Its features make it suitable for systems that require high-speed data operations with minimal power usage.